IPD78CN10NGATMA1

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IPD78CN10NGATMA1 is an insulated gate type FET (IGFET) device that belongs to the family of advanced power metal-oxide-semiconductor field-effect transistors (MOSFETs). It is designed for the rapid switching of heavy loads, even at high frequencies. The device is manufactured on a high-performance advanced bipolar technology process, which has excellent thermal stability and ruggedness, and is also suitable for high speed power control and conversion.

The IPD78CN10NGATMA1 is a single N-channel MOSFET with a low-resistance P-type source and a high-resistance N-type drain. Its gate is engineered with a reverse-gate-to-source breakdown voltage of 10V, as well as a high-performance gate oxide layer that prevents any unwanted recovery of the device. This quality enables the MOSFET to perform in the most demanding switching scenarios where higher switching capacitance is required.

The IPD78CN10NGATMA1 is suitable for use in a wide range of power conversion applications, such as switching DC-DC converter, power factor correction, power switching regulator, DC-AC inverter, and motor control applications. It is also a suitable choice as a switching device in gate drives and power distribution systems such as lighting and UPS applications.

In addition, the IPD78CN10NGATMA1 is also used in applications where a low-resistance and high-voltage MOSFET is required. It is well suited for high-side switching and ground-referenced applications where a low on-resistance and high breakdown voltage are required. Its rugged design is also suitable for pulse-width modulation applications, such as class D amplifiers, LED drivers, and power controllers.

The working principle of the IPD78CN10NGATMA1 MOSFET is simple. When a voltage is applied to the gate of the device, the current flow through the drain and source terminals is controlled. The higher the gate-source voltage, the higher the channel conductance, and the lower the channel resistance. With the applied drain-to-source voltage, the MOSFET can be used to create a saturated current flow, which is useful for switching applications.

The IPD78CN10NGATMA1 is a power MOSFET device with a low-resistance P-type source and a high-resistance N-type drain. It is designed to switch high power loads quickly and efficiently, even at high frequencies. Its gate is engineered with a reverse-gate-to-source breakdown voltage of 10V, and high-performance gate oxide layer, which makes it suitable for high-demand applications such as power factor correction, high-side switching, and ground-referenced applications.

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