IPN70R900P7SATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPN70R900P7SATMA1 is a silicon-based field effect transistor (FET) manufactured by International Rectifier (IR). It is primarily used in communications, power, and other industrial electronic circuits. As a single FET device, it has two terminals connected to its drain and gate, allowing current flow from the drain to the gate. The main advantages of utilizing a FET instead of a bipolar transistor are improved efficiency, reduced power consumption, higher voltages, higher temperatures and higher performance.

The IPN70R900P7SATMA1 is a N-channel enhancement mode FET, meaning that is can be used in a variety of applications requiring low current, high speed, and low voltage operation. The device has a drain-to-source breakdown voltage (Vdss) of 100V, a drain-to-source on resistance (Rds-on) of 9Ω, a gate-source voltage (Vgs) of 20V and a drain current (Id) rating of 7A. It has an exceptionally low leakage current and is designed for use in high frequency power switching applications.

In order to operate properly, a FET requires a certain voltage between the gate and source. This voltage, known as the gate-source voltage (Vgs), is used to control the flow of electrons between the drain and source. When the Vgs reaches a certain level, the device becomes "on". The "on" state means that the current can begin to flow. This current flow is then used to control the flow of electrons between the drain and source.

In order to control the current flow between the source and drain, the gate-source voltage must be accurately regulated. If the gate-source voltage is too high, the device will become "on" too quickly and the current flow will be uncontrolled. If the gate-source voltage is too low, the device will become "off" too quickly and the current will be blocked. As such, the gate-source voltage must be carefully monitored and adjusted when necessary to maintain the proper currect flow.

In addition to controlling the current flow, the gate-source voltage also affects the internal resistance of the FET. If the gate-source voltage is too low, the internal resistance of the FET will be too high, reducing its efficiency. If the gate-source voltage is too high, the internal resistance of the FET will be too low, reducing its performance. Therefore, it is important that the gate-source voltage is kept within its operating range.

The IPN70R900P7SATMA1 FET is an ideal solution for controlling the current flow between the source and drain in a variety of applications. Its high-speed operation and low voltage requirements make it well-suited for switching applications, such as power supply circuits and power management circuits. Its low leakage current also makes it ideal for communications, automotive, and other industrial applications where low power consumption is desired.

The specific data is subject to PDF, and the above content is for reference