IPN70R2K1CEATMA1

Vgs(th) (Max) @ Id:	3.5V @ 70µA
Package / Case:	SOT-223-3
Supplier Device Package:	PG-SOT223
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	163pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7.8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.1 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	750V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPN70R2K1CEATMA1 is a single-channel N-channel enhancement-mode MOSFET for mobile applications. This MOSFET is one of the most advanced power devices in the market today and it has been specially designed for high-voltage, high-side current-shunt control and secondary-side inrush current regulation applications. It is suitable for various applications including overload and short-circuit protection, hunting and overcurrent protection, as well as LED lighting control. It has a low total gate charge which enables fast switching speed and excellent performance.The device also features a low-resistance body diode, providing a rectification effect with a low reverse recovery time. Additionally, it featuers Schottky diode protection which reduces transient overvoltage stress on the input voltage rails of the application. The maximum DC drain current of this device is 40A, with a maximum drain-to-source voltage of 30V. The drain-to-source on-state resistance of this device is 2.1mΩ. It also features a high current capability of up to 52A drawn from the source.The features of this MOSFET have enabled it to be successfully used in applications such as DC/DC converters, synchronous buck regulation, lighting and LED driver control, and many other applications.Application FieldIPN70R2K1CEATMA1 MOSFETs are typically used for high-voltage, high-side current-shunt control and secondary-side inrush current regulation applications. It is a great choice for use as overload and short-circuit protection, hunting and overcurrent protection, as well as LED lighting control. It is also ideal for use in DC/DC converters, synchronous buck regulation, lighting and LED driver control and other applications.Working PrincipleIPN70R2K1CEATMA1 is a N-channel MOSFET. N-channel MOSFETs allow current to flow in the channel when a small electric charge is applied to the gate and the voltage between the source and the drain of the transistor is increased. When the gate-source voltage of the MOSFET is more positive than the channel voltage, the channel becomes "pinched off" and no current can flow through it. This has the effect of switching the transistor off. When the gate-source voltage is more negative than the channel voltage, the channel potential is lowered, which reduces the resistance between the source and drain electrodes. This creates a \'conduction path\' where current is allowed to flow through, turning the transistor \'on\'. The device also features a Schottky diode protection which helps reduce the transient overvoltage stress on the input voltage rails of the application. This is done by limiting the voltage which can be applied to the gate of the MOSFET, which reduces the chances of damage caused by overvoltage. The low total gate charge of this device allows for fast switching speeds and excellent performance. This allows the MOSFET to be used in applications which require high levels of performance and reliability. Overall, the IPN70R2K1CEATMA1 is a powerful and reliable device which is ideal for use in a variety of applications. The protection features integrated into the device make it well-suited for applications which require high levels of performance and reliability.

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