IPN70R600P7SATMA1

Vgs(th) (Max) @ Id:	3.5V @ 90µA
Package / Case:	SOT-223-3
Supplier Device Package:	PG-SOT223
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	6.9W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	364pF @ 400V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	10.5nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	600 mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Tc)
Drain to Source Voltage (Vdss):	700V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPN70R600P7SATMA1 Application Field and Working Principle

Introduction

The IPN70R600P7SATMA1, also known as the IPN-R7S, is an enhancement-type laterally diffused metal oxide semiconductor (LDMOS) device with a breakdown voltage of 600V, a drain current of 70A, and a maximum power rating of 700W. It is produced by Infineon Technologies and is targeted for commercial, industrial and lighting applications. The IPN-R7S has a revolutionary three-dimensional lateral diffusion technology which provides an efficient and reliable source of power for a wide variety of applications.

Overview of the IPN70R600P7SATMA1

The IPN-R7S is a monolithic power device that combines the performance of a LDMOS transistor with the low gate charge of a MaSOFET (metal oxide semiconductor field-effect transistor) architecture. This combination results in superior overall performance and improved efficiency. The device is designed to operate over a broad temperature range and provides reliable high-frequency switching capability. Additionally, it is suitable for driving highly capacitive loads and has very good switching characteristics. As with most power MOSFETs, the various parameters of the IPN-R7S are subject to manufacturing tolerances and ratings.

Application Field of IPN70R600P7SATMA1

The IPN-R7S is ideally suited for a wide range of power switching applications. It can be used in communications, computer, industrial, and automotive applications, as well as for DC/DC and AC/DC motor control, drives, and motor and lighting control. The device is well-suited for lighting applications requiring a high energy efficiency and low system cost. It is also suitable for applications requiring high operating temperature and reliability, such as harsh environment and extended life cycle products. Additionally, its high-performance, low-cost, and reliable switching characteristics make it a preferred solution for power supplies, converters, switch-mode power converters, and switching DC motors running up to 500kHz.

Working Principle of IPN70R600P7SATMA1

The IPN-R7S is a three-dimensional lateral diffusion device that uses an N-type substrate. The substrate is surrounded by a combination of an N-type gate and a P-type sidewall substrate. The device has a three-dimensional drain structure and a two-dimensional gate structure that enables a lateral diffusion of electrons and holes. This enables a high gain and low gate-drain capacitance. The device is capable of operation at high frequencies and has a high dielectric breakdown due to the N-type substrate, which also enhances its power dissipation and speed.The operating principle of the IPN-R7S is similar to that of a conventional MOSFET. The gate controls the drain current and the P-type sidewall insulates the drain from the substrate. The N-type substrate acts as a capacitive plate, thus increasing the overall internal capacitance of the device and improving its high-frequency performance. The P-type sidewall also improves the device’s self-heating capabilities, enabling reliable switching operation at high temperatures.

Conclusion

The IPN70R600P7SATMA1 is a highly efficient and innovative monolithic power device that delivers outstanding performance and efficiency in a wide range of power switching applications. Its unique three-dimensional lateral diffusion architecture provides a low gate charge, fast switching speeds, and improved switching characteristics. This device is well-suited for applications requiring high reliability, accurate control, and high temperatures. Additionally, its robustness, low cost, and reliable operation make it a preferred solution for industrial, automotive, and lighting applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description