IPN70R450P7SATMA1

Vgs(th) (Max) @ Id:	3.5V @ 120µA
Package / Case:	SOT-223-3
Supplier Device Package:	PG-SOT223
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	7.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	424pF @ 400V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	13.1nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	450 mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	700V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IPN70R450P7SATMA1 is a single N-channel Enhancement Mode Field Effect Transistor (FET) designed to deliver superior performance in high temperature, low voltage applications. This high performance FET is suitable for switching, amplifier, and power applications, and is designed to deliver superior performance in high temperature, low voltage applications. It is suitable for applications such as motor controllers, inverters, and integrated systems that demand high levels of power efficiency and reliability. It is also an ideal solution for high temperature applications that require sustained performance over time.

Features

The IPN70R450P7SATMA1 is a single N-channel Enhancement Mode Field Effect Transistor (FET) designed for superior performance in high temperature, low voltage applications. It features a low drain to source on-resistance (RDS(on)) and low gate-source leakage current (Igss) that delivers superior performance at high temperatures. It also features an integrated body diode which allows for protection against high voltage transients. The FET\'s high 4500V breakdown voltage (BV), together with its very low drain-source breakdown voltage (BVdss), makes it suitable for use in high voltage and high temperature applications.

Application Field and Working Principle

The IPN70R450P7SATMA1 is suitable for applications such as motor controllers, inverters, and other high power integrated systems that require high electrical performance in a wide range of temperature and voltage conditions. The FET is based on an N-Channel Enhancement Mode Field Effect Transistor (FET), which is designed to deliver superior performance in high temperature and low voltage environments. It does this by using an N-type channel material which allows electric current to flow through the FET when an appropriate voltage is applied to the gate. The low drain-source on-resistance (RDS(on)) and low gate-source leakage current (Igss) allows the FET to deliver superior performance in high temperature, low voltage environments and helps to ensure that the system performance is maintained over time. Additionally, the integrated body diode helps to protect against high voltage transients.

Benefits

The IPN70R450P7SATMA1 is an ideal solution for power electronic applications which require reliable performance in high temperature, low voltage conditions. With a very low RDS(on), high BV, and integrated body diode, the FET helps to ensure sustained performance over time and increased levels of reliability. Its low gate-source leakage current also helps to reduce power consumption in the system and can help to improve the overall system efficiency. The FET\'s high 4500V breakdown voltage makes it suitable for use in high voltage applications and its high temperature-resistance ensures sustained performance over time. Therefore, the IPN70R450P7SATMA1 is an ideal solution for power electronic applications which require reliable performance in high temperature, low voltage conditions.

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