IPS70N10S3L-12 Allicdata Electronics
Allicdata Part #:

IPS70N10S3L-12-ND

Manufacturer Part#:

IPS70N10S3L-12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 1TO251-3
More Detail:
DataSheet: IPS70N10S3L-12 datasheetIPS70N10S3L-12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are used as power switches in a variety of applications like switching regulator, motor driver and automotive engine control system, etc. Among them, the IPS70N10S3L-12 is one of the most popular ones.

The IPS70N10S3L-12 is a N-channel MOSFET with low ohmic resistance. It is made of Silicon material and composed of three pins, drain, gate and source. The devices offer a high switching performance with a low total gate charge (Qg) and a low gate-source threshold voltage (Vgsth).

Features and applications of IPS70N10S3L-12:
• Drain-Source Voltage (VDS): 100V (Vgs=10V)
• Drain Current (ID): 70A (Vgs=10V)
• Gate Threshold Voltage (Vgsth): 3V
• Transconductance (gm): 90A/V
• Power Dissipation (PD): 25W
• Operation temperature range: from -55℃ to 175℃
• Common applications: Circuit protection, Battery protection, DC-DC converter and Motor driver

Working Principle:
The basic working principle of MOSFET is easy to understand. The most important feature of an MOSFET is that it is composed of a channel through which current can be achieved by applying a voltage to its gate. The channel forms between the source and drain when the gate voltage is greater than the threshold voltage. Thus, when a input signal is applied to the Gate the MOSFET change its channel width and the resistance between the drain and the source changes, allowing current to flow through the channel.

In the IPS70N10S3L-12, the maximum Drain Current is 70A when the Gate-Source Voltage (VGS) is 10V. When the Gate-Source voltage is within 10 V, the drain current will be inversely proportional to the gate voltage. Meanwhile, the temperature range of IPS70N10S3L-12 is operating from -55℃ to 175℃ with a maximum drain current of 70A.

Conclusion:
The IPS70N10S3L-12 is a N-channel MOSFET with a low ohmic resistance. It is well-suited for circuit protection, battery protection, DC-DC converter and motor driver. With its low gate-source threshold voltage, high switching performance and low power dissipation, it can provide better performance than the traditional MOSFET devices. The operating temperature range of the IPS70N10S3L-12 is from -55℃ to 175℃, and works optimum when used in the temperature range. With its features and working principle, it is used widely in many applications.

The specific data is subject to PDF, and the above content is for reference

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