| Allicdata Part #: | IPS70R600CEAKMA1-ND |
| Manufacturer Part#: |
IPS70R600CEAKMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 700V 10.5A TO-251 |
| More Detail: | N-Channel 700V 10.5A (Tc) 86W (Tc) Through Hole PG... |
| DataSheet: |  IPS70R600CEAKMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 0.21mA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | PG-TO251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 86W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 474pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Description
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The IPS70R600CEAKMA1 is a 600V UltraFast MOSFET from Infineon Technologies AG. This device is part of the CoolMOS™ C7 series, which has been optimized for high efficiency and performance in specific application conditions related to SMPS (switch-mode power supplies). This includes applications such as motor drives, AC-DC and DC-DC converters, power over Ethernet (PoE), lighting systems, and solar systems. The IPS70R600CEAKMA1 is capable of operating at very high frequencies and high power densities with low losses. This makes it an ideal choice for a wide range of high-efficiency power applications.The IPS70R600CEAKMA1 is a single-channel MOSFET that features an ultra-wide body design. This allows the device to handle higher drain-source currents than conventional MOSFETs. It is also designed to have excellent thermal properties, allowing it to dissipate heat quickly and efficiently. This helps reduce power losses while operating at high drain currents.The IPS70R600CEAKMA1 is a “built-in-diagnostic-free” MOSFET, meaning it does not require any additional components to protect against short circuit conditions. This simplifies the design process as there is no need to implement additional protection circuitry. The device is also able to withstand overvoltage conditions, meaning it is suitable for use in systems that may be exposed to unexpected voltage spikes.The IPS70R600CEAKMA1 can provide up to 17A continuous drain current, making it ideal for applications such as motor drivers and power supplies. The device also has a low on-state resistance, which helps reduce power losses at high load currents. This allows the device to be used in applications that require high efficiency over a wide range of loads.Now let’s talk about the working principle of the IPS70R600CEAKMA1. The device works by utilizing the electrostatic force between a gate electrode and a drain electrode to control the flow of drain-source current. To turn the MOSFET on, a positive gate-source voltage is applied, creating an electrostatic field between the gate and the drain. This field attracts electrons, in turn, allowing current to flow between the drain and the source. To turn the MOSFET off, a negative gate-source voltage is applied, causing the electrons to be repelled away from the drain and inhibiting current flow between the drain and the source.Overall, the IPS70R600CEAKMA1 is a highly-efficient MOSFET that can be used in a variety of high-voltage and high-current applications. It is an excellent choice for applications such as motor drives, power supplies, and power over Ethernet (PoE). Furthermore, its built-in diagnostic-free feature makes it well-suited for applications where additional protection circuitry is not required.
The specific data is subject to PDF, and the above content is for reference
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