Allicdata Part #: | IPS70R950CEAKMA1-ND |
Manufacturer Part#: |
IPS70R950CEAKMA1 |
Price: | $ 0.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 700V 7.4A TO251 |
More Detail: | N-Channel 700V 7.4A (Tc) 68W (Tc) Through Hole PG-... |
DataSheet: | IPS70R950CEAKMA1 Datasheet/PDF |
Quantity: | 1138 |
1 +: | $ 0.56700 |
10 +: | $ 0.49581 |
100 +: | $ 0.38260 |
500 +: | $ 0.28342 |
1000 +: | $ 0.22674 |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PG-TO251 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 328pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15.3nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPS70R950CEAKMA1 is a n-channel trench-gate MOSFET from Vishay, introduced in 2020. The device is designed to provide low RDS (on) with superior gate charge x RDS (on) and Power Dissipation Capability. It is designed for applications such as Bipolar DC-DC Converters and Automotive Load Switching.
The device consists of a single chip and is packaged in an industry standard SOT-227 package. It has maximum power dissipation of 3.2 Watts at 25°C and an operating temperature range of -55°C to 150°C. It has a maximum drain-source voltage of 600V and a maximum drain current of 70A. Its gate-source threshold voltage is 1.0V and its gate-drain threshold voltage is 4.7V. It also has low gate charge of 8nC and fast switching speed of 4.5ns.
The IPS70R950CEAKMA1 has a number of features that make it suitable for a variety of applications. Its low on-state resistance reduces power losses, allowing small, efficient switches. Its fast switching speed improves system performance by reducing power consumption and switching time. Its low gate charge improves system efficiency by allowing a smaller, faster gate drive. The device is also robust, withstanding temperatures from -55°C to 150°C and a maximum drain-source voltage of 600V. This makes it suitable for automotive load switching applications.
The IPS70R950CEAKMA1 works by converting a small amount of electric charge into a large amount of energy. When a voltage is applied to the gate, it creates an electric field which in turn attracts electrons. This causes the channel between the source and drain (which are insulated from each other by an oxide layer) to become conductive, allowing an electrical current to flow. By varying the voltage applied to the gate, the amount of current flowing in the channel can be regulated.
The IPS70R950CEAKMA1 is a versatile and reliable device. Its combination of low resistance, fast switching speed, and low gate charge makes it suitable for a wide range of applications. Its robustness also means it can withstand extreme temperatures, making it a good choice for automotive applications. Whether you need to switch DC-DC converter loads or automotive loads, the IPS70R950CEAKMA1 is a great choice.
The specific data is subject to PDF, and the above content is for reference
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