IPS70R2K0CEAKMA1

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IPS70R2K0CEAKMA1 is a state-of-the-art, highly-flexible high-speed single n-channel metal oxide semiconductor field-effect transistor (MOSFET). It utilizes advanced field-stop engineering and DMOS process technology for fast switching and low on-state resistance, RDS(ON). The device is widely used for applications such as audio amplifiers, battery protection, power supplies, switching regulators, DC to DC switching converters, motor drivers, DC motor speed controllers, and lighting applications.

The device is designed with a number of key features that make it well-suited for a variety of applications. The IPS70R2K0CEAKMA1 is an n-channel MOSFET with a breakdown voltage of 70V, maximum drain current of 2A (at 25°C), maximum drain-source on-state resistance of 40mΩ (at 8V and 25°C), gate threshold voltage of 4V and gate capacitance of 12.5pF. It has an operating temperature range of -55°C to 150°C and a storage temperature range of -55°C to 150°C.

The most important feature of IPS70R2K0CEAKMA1 is its ability to efficiently and reliably switch large amounts of power at high frequencies. Because it operates with a low gate-source voltage (Vgs) and low drain-source on-state resistance (RDS(ON)), the device is able to deliver fast switching speeds and low on-state losses. The device is extremely robust and resistant to damage from electrostatic discharge (ESD).

In terms of its application field, the IPS70R2K0CEAKMA1 is suitable for use in power delivery circuits, power supplies, switching regulators, DC to DC converters, motor drivers, and audio amplifiers. It is also used in applications such as battery protection and lighting control.

The working principle of the IPS70R2K0CEAKMA1 is based on the electrostatic attraction between the gate and source region. The gate forms an electrical barrier between the source and drain regions, allowing current to flow through it when a voltage is applied to the gate. This voltage opens the gate and permits current to flow from the source to the drain. When the voltage is removed, the gate closes and current does not flow.

The channel resistance of the IPS70R2K0CEAKMA1 is generally very low in the linear region. As the voltage applied to the device increases, the channel resistance increases and limits the current flow from the source to the drain. This is known as saturation current and is one of the parameters used to describe the performance of the MOSFET.

The IPS70R2K0CEAKMA1 is a highly advanced MOSFET providing high-speed switching, low gate threshold voltage, and low RDS(ON). Its application field and working principle make it an ideal choice for a variety of applications ranging from power delivery to power supplies, switching regulators, DC to DC converters, and motor drivers.

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