| Allicdata Part #: | IPS70R1K4CEAKMA1-ND |
| Manufacturer Part#: |
IPS70R1K4CEAKMA1 |
| Price: | $ 0.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET NCH 700V 5.4A TO251 |
| More Detail: | N-Channel 700V 5.4A (Tc) 53W (Tc) Surface Mount PG... |
| DataSheet: |  IPS70R1K4CEAKMA1 Datasheet/PDF |
| Quantity: | 1365 |
| 1 +: | $ 0.47880 |
| 10 +: | $ 0.41706 |
| 100 +: | $ 0.32162 |
| 500 +: | $ 0.23822 |
| 1000 +: | $ 0.19058 |
| Vgs(th) (Max) @ Id: | 3.5V @ 100µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | PG-TO251 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 53W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IPS70R1K4CEAKMA1 is a popular field effect transistor (FET) which is widely used for various applications. It is a single type FET in which the source terminal is connected to the drain terminal for efficient performance. Due to its versatility and high performance this device is used for various commercial, industrial and special applications.
The IPS70R1K4CEAKMA1 is a single FET with both the source and drain regions connected to one another. This provides high efficiency and reliability allowing it to be used in applications that require high current and voltage ratings. This FET also features very low on-state resistance and a wide variety of features such as an integrated body diode, low capacitance, and high frequency operation.
The working principle of the IPS70R1K4CEAKMA1 is based on the physics of the depletion mode field effect transistor in which a majority carrier is injected into the depletion layer of the FET, resulting in a small conduction path between the source and drain terminals. This path, also referred to as a “channel”, allows current to flow when the gate voltage is raised to a certain threshold level.
The IPS70R1K4CEAKMA1 is widely used in applications requiring high current and voltage capabilities such as switching power supplies, and motor control. This device is also used for various applications involving low-frequency switching, audio amplifiers and LED lighting applications. The device is also suitable for applications which require a low on-state resistance and high switching speed, while having low switching losses.
In conclusion, the IPS70R1K4CEAKMA1 is a single type FET with a wide range of applications. Its efficient performance and high current and voltage ratings make it a great choice for various commercial, industrial and special applications. This device operates on the principle of a depletion mode field effect transistor and offers low on-state resistance, high frequency operation and low switching losses for efficient performance.
The specific data is subject to PDF, and the above content is for reference
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