| Allicdata Part #: | IPSA70R2K0CEAKMA1-ND |
| Manufacturer Part#: |
IPSA70R2K0CEAKMA1 |
| Price: | $ 0.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CHANNEL 700V 4A IPAK |
| More Detail: | N-Channel 700V 4A (Tc) 42W (Tc) Through Hole IPAK ... |
| DataSheet: | IPSA70R2K0CEAKMA1 Datasheet/PDF |
| Quantity: | 1500 |
| 1 +: | $ 0.51030 |
| 10 +: | $ 0.43092 |
| 100 +: | $ 0.32319 |
| 500 +: | $ 0.23702 |
| 1000 +: | $ 0.18315 |
| Vgs(th) (Max) @ Id: | 3.5V @ 70µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | IPAK (TO-251) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 163pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IPSA70R2K0CEAKMA1 is a single-gate field-effect transistor (FET). It is a type of solid-state transistor that is used to amplify electrical power or signals across a wide range of applications. FETs are also known as insulated-gate field-effect transistors, and are increasingly being used in applications where high power, high temperature, and high voltage operation take place. The IPSA70R2K0CEAKMA1 is a unique FET design that offers improved performance characteristics over traditional FET designs.
The IPSA70R2K0CEAKMA1 is a vertical-channel FET. This means that the channel is oriented in an upright position rather than the traditional flat-channel design. This unique design allows the transistor to operate with higher voltage and power ratings, as well as better thermal performance. The IPSA70R2K0CEAKMA1 also features a low-resistivity channel, which allows higher current ratings and better power handling capabilities. Additionally, the device has a built-in, ultra-low on-resistance structure, which reduces power consumption and reduces the amount of heat generated.
The IPSA70R2K0CEAKMA1 is used in a wide variety of applications, including motor drives, inverters and converters, synchro/resolver drives, power switches, and power tools. In motor drives, the FET is used to control the speed and direction of the motor. In inverters and converters, the device is able to control the input and output power levels. And, in synchro/resolver drives and power switches, it is used to accurately control the supply voltage and current. Additionally, the device can be used in power tools to provide efficient power control.
The working principle of the IPSA70R2K0CEAKMA1 is based on the principles of the field-effect transistor. A FET is comprised of four terminals: a source, a drain, a gate, and a body. When a positive voltage is applied to the gate, it creates a conductive channel between the source and the drain. This results in an increase in the current flow through the channel and a corresponding increase in power output. The body terminal acts as a barrier, controlling the current flow and preventing an excessive amount of current from entering or leaving the device.
The IPSA70R2K0CEAKMA1 can handle a wide range of temperatures, voltage, and power levels while still providing reliable performance. Additionally, its low-resistance channel design allows for better current handling and improved power handling capabilities. This makes the IPSA70R2K0CEAKMA1 an ideal choice for a variety of power applications, from motor drives to power tools.
The specific data is subject to PDF, and the above content is for reference
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IPSA70R2K0CEAKMA1 Datasheet/PDF