Allicdata Part #: | IPSA70R600P7SAKMA1-ND |
Manufacturer Part#: |
IPSA70R600P7SAKMA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET COOLMOS 700V TO251-3 |
More Detail: | N-Channel 700V 8.5A (Tc) 43.1W (Tc) Through Hole P... |
DataSheet: | IPSA70R600P7SAKMA1 Datasheet/PDF |
Quantity: | 1925 |
1 +: | $ 0.62370 |
10 +: | $ 0.54558 |
100 +: | $ 0.42097 |
500 +: | $ 0.31183 |
1000 +: | $ 0.24946 |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 400V |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 43.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 364pF @ 400V |
Vgs (Max): | ±16V |
Series: | CoolMOS™ P7 |
Vgs(th) (Max) @ Id: | 3.5V @ 90µA |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IPSA70R600P7SAKMA1 is a type of transistor called a single MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFETs are a type of FET, or Field Effect Transistor, which is a subfamily of transistors that includes bipolar junction transistors, junction insulated gate field effect transistors, and MOS transistors. This type of transistor is capable of amplifying electronic signals, as well as switching electronic circuits on and off with very low power consumption. Its small size and low power requirement makes it ideal for applications in mobile or battery-powered Devices.
IPSA70R600P7SAKMA1 can be used in a number of different applications in consumer electronics, such as portable computers, phones, radios, and TVs, as well as other consumer electronic items. It is also used in industrial and commercial applications such as temperature controllers, motor controllers, automation, power supplies, and communication systems. This MOSFET has a breakdown voltage of 600 volts, which makes it suitable for even higher power applications. It also has a very low on-state resistance, meaning that it consumes less power when it is on. This makes it ideal for applications where low power consumption is critical.
The working principle of IPSA70R600P7SAKMA1 is based on the gate and source terminals. The gate terminal acts as an input and is used to control the flow of current between the source and drain terminals, which act as outputs. The amount of current that flows between the source and drain terminals is determined by the voltage applied to the gate terminal. This voltage can be adjusted using an external circuit, allowing the user to control the amount of current that flows through the transistor. This allows the transistor to be used in a variety of applications, such as amplifier circuits or switching circuits.
In summary, the IPSA70R600P7SAKMA1 is a single MOSFET with a breakdown voltage of 600 volts, making it suitable for a variety of applications, both consumer and industrial. Its low power consumption and small size make it ideal for low power electronics such as mobile devices and battery-powered devices. Its working principle of controlling current flow between the source and drain terminals based upon input voltage makes it effective for applications in amplifier circuits and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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