| Allicdata Part #: | IPSA70R900P7SAKMA1-ND |
| Manufacturer Part#: |
IPSA70R900P7SAKMA1 |
| Price: | $ 0.54 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET COOLMOS 700V TO251-3 |
| More Detail: | N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-... |
| DataSheet: |  IPSA70R900P7SAKMA1 Datasheet/PDF |
| Quantity: | 1903 |
| 1 +: | $ 0.49140 |
| 10 +: | $ 0.42903 |
| 100 +: | $ 0.33100 |
| 500 +: | $ 0.24517 |
| 1000 +: | $ 0.19614 |
| Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 400V |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | PG-TO251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 30.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 211pF @ 400V |
| Vgs (Max): | ±16V |
| Series: | CoolMOS™ P7 |
| Vgs(th) (Max) @ Id: | 3.5V @ 60µA |
| Rds On (Max) @ Id, Vgs: | 900 mOhm @ 1.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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TheIPSA70R900P7SAKMA1is a FET or Field Effect Transistor. It is what is known as a single MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. It is primarily used in power management applications and has a high power N-channel MOSFET structure. In addition, it has Special Characteristics, such as low ON-resistance, a built-in Schottky diode and high reliability.
The IPSA70R900P7SAKMA1 has been designed to be used in power control applications such as motor driver, power switching, DC-DC volume control, and active clamp circuit control. Its superior characteristics and design enables it to provide optimum performance and low power consumption in these applications. Its ultra low ON-resistance, fast switching speed and low saturation voltage characteristics ensure that this FET can provide more efficient power management compared to traditional FETs.
The working principle behind the IPSA70R900P7SAKMA1 is fairly simple and straightforward. In its most basic form, a MOSFET is a voltage-controlled device that regulates power by using two insulated gates. The gate voltage determines the conductive state of the device. The higher the gate voltage, the more conductive the device is. When the gate voltage is low, the device conducts less current. This principle is used in the IPSA70R900P7SAKMA1 to regulate the power in different applications.
In addition to its power management applications, the IPSA70R900P7SAKMA1 can also be used in other complex applications, such as input protection, temperature control and temperature protection. Its built-in Schottky diode also makes it suitable for use in cascode ESD protection circuits. The low leakage current also makes it suitable for use in applications that require high accuracy and reliability.
In short, the IPSA70R900P7SAKMA1 is a versatile device that can be used in a wide range of applications. Its built-in Schottky diode, low leakage current and low ON resistance make it an ideal choice for power management and other complex applications that require accuracy and reliability. Its superior characteristics ensure it is capable of providing optimum performance and low power consumption in all applications.
The specific data is subject to PDF, and the above content is for reference
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