Allicdata Part #: | IPSA70R360P7SAKMA1-ND |
Manufacturer Part#: |
IPSA70R360P7SAKMA1 |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET COOLMOS 700V TO251-3 |
More Detail: | N-Channel 700V 12.5A (Tc) 59.5W (Tc) Through Hole ... |
DataSheet: | IPSA70R360P7SAKMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.74970 |
10 +: | $ 0.66276 |
100 +: | $ 0.52366 |
500 +: | $ 0.40609 |
1000 +: | $ 0.32059 |
Gate Charge (Qg) (Max) @ Vgs: | 16.4nC @ 400V |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 59.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 517pF @ 400V |
Vgs (Max): | ±16V |
Series: | CoolMOS™ P7 |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IPSA70R360P7SAKMA1 is a device typically used in high voltage and high current power applications. It is found in power switching and amplification circuits and is effective in a variety of low-power applications. It is a single-gate N-channel insulated-gate bipolar transistor (IGBT) and is one of the most powerful devices available in the market.
This device is a combination of two components, the p-channel MOSFET and the n-channel IGBT. This combination of two devices results in improved performance and increased power handling capacity. The device works as a powerful switch, allowing for rapid switching of high current and voltage with decreased losses and increased efficiency compared to a single device switch.
Using a primary voltage input, the IPSA70R360P7SAKMA1 works by switching high current and voltage. The p-channel MOSFET acts as the switch that takes the high-frequency signal to the n-channel IGBT. This has the effect of controlling and reducing the amount of energy lost due to dissipative and capacitive losses that are traditionally found in high-voltage and current applications. By reducing losses and increasing efficiency, this device is able to work at extremely high speeds, making it a versatile and valuable device in a variety of applications.
As an insulated-gate bipolar transistor (IGBT), the IPSA70R360P7SAKMA1 is used in high power switching applications. It is well-suited to applications involving voltage of around 1000 V and current of up to 20A. It is used in many applications including motor control, renewable energy storage and conversion, UPS systems, high power drives, inverters and snubber circuits.
Due to its intelligent design, the IPSA70R360P7SAKMA1 is capable of controlling high current and voltage efficiently, and with minimum losses. It also has a low on-state voltage drop and a low gate drive power requirement so that the device can operate in a wide variety of temperatures with low power consumption and minimal wear.
The device is available in a range of formats, allowing for various types of mounting and making it easy to integrate into different applications. It is also highly reliable and efficient, with ratings of 3A and 100V, meaning that it can even be used in industrial applications.
The IPSA70R360P7SAKMA1 is an extremely powerful device that can be used in many applications. It is well-suited to a wide range of medium to high voltage and current power applications, and is suitable for use in motor control, renewable energy storage and conversion, high power drives, inverters and snubber circuits. With its intelligent design and low thermal and power losses, the device is suitable for a wide range of temperatures, making it a reliable, efficient and versatile device.
The specific data is subject to PDF, and the above content is for reference
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