IRF2807STRLPBF

IRF2807STRLPBF is a N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) with a drain current of 46A and drain-source breakdown voltage up to 100V. It utilizes an advanced planar stripe and DMOS technology to provide enhance performance and low on-resistance. The layout of this transistor capacitively couples gate to source and also includes an internal gate-to-drain diode. This MOSFET is suitable for use in power management applications, specifically in DC to DC converters and motor drivers.

Application Field

IRF2807STRLPBF is widely used in industrial and commercial applications such as motor drives, battery management, automotive and electric power systems. It is especially suitable for use in high-power circuits. Due to its low on-resistance, high current density and high breakdown voltage, it is also suitable for use in power factor correction (PFC) and as a switching element in DC-DC converters. It can even be used in high-temperature applications up to 175℃.

Working Principle

A MOSFET works by controlling the current between the drain and the source by using an electric field. This electric field is created by applying a voltage to the gate of the transistor. This controls the amount of current that can flow between the drain and the source. In other words, the gate voltage controls the resistance between the drain and the source. When the voltage applied to the gate is zero, the resistance between the drain and the source is maximum. When the applied voltage is higher, the resistance decreases, allowing more current to flow through the transistor.

IRF2807STRLPBF has a highly-reliable protection circuit built into it, which includes reverse-body protection and over-current, over-temperature and under-voltage protection. This ensures the transistor operates safely and efficiently. The device also has drain-to-source capacitance which helps reduce switching losses, making it more efficient when used in power management applications.