Allicdata Part #: | IRF2807ZS-ND |
Manufacturer Part#: |
IRF2807ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 75A D2PAK |
More Detail: | N-Channel 75V 75A (Tc) 170W (Tc) Surface Mount D2P... |
DataSheet: | IRF2807ZS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 53A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF2807ZS is a high performance n-channel field effect transistor (FET) which is commonly used in a wide range of applications, including switching, power conversion, and power management circuitry. It is typically used to control large amounts of power over a wide range of voltages and currents. The IRF2807ZS is a voltage-controlled device, meaning that its output current can be controlled by varying the voltage applied to its gate terminal. This makes it ideal for applications where precise control of power is needed.
The IRF2807ZS is a single FET, meaning that it contains one FET. The device features a maximum on-state resistance (RDS) of 6 milliohms and a maximum drain-source voltage rating (VDS) of 50 volts. It is manufactured in a 20-pin Power MOSFET (PMOS) package, providing low capacitance and low thermal resistance. It is a power MOSFET, meaning that it is also capable of handling large currents and higher voltages than conventional FETs, making it particularly well-suited for DC-DC conversion and other power management applications.
The IRF2807ZS is a common choice for applications such as DC-DC switching and power conditioning, motor control, relay and lamp control, power supply control and protection, and load and source switching. Its wide range of control voltages, current levels and power ratings make it suitable for a variety of applications, from industrial and home appliances to automotive and robotic applications.
The IRF2807ZS is a voltage-controlled device, meaning that its output current can be controlled by varying the voltage applied to its gate terminal. This is achieved by using the voltage to change the electric field across the gate-source terminal, which in turn affects the charge stored in the gate-drain region, thereby changing the current flowing through the device. This allows the device to be used to control current, voltage, and power in a variety of applications.
The IRF2807ZS is a robust and reliable device, designed to operate in a variety of environmental conditions. It features a low on-state resistance, which reduces power losses and increases efficiency in applications. The device also features an integrated protection circuit to protect the high-side MOSFET from over-current and over-voltage conditions.
The IRF2807ZS is a versatile power MOSFET, capable of handling a wide range of current and voltage levels. Its low voltage and low on-state resistance make it a good choice for applications such as DC-DC switching and power conditioning, motor control, relay and lamp control, as well as load and source switching. Its wide operating temperature range and integrated protection circuit make it suitable for a variety of environments, from industrial and home appliances to automotive and robotic applications.
The specific data is subject to PDF, and the above content is for reference
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