IRF2204PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	330W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5890pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	200nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 130A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	210A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF2204PBF Application Field and Working Principle

The International Rectifier IRF2204PBF is a power MOSFET. This semiconductor device offers excellent performance in various applications including switching, audio, data and signal processing, and power control. It is commonly used in power management, automotive, industrial and consumer applications.The IRF2204PBF is a high-voltage MOSFET that can be used to regulate power in a wide variety of applications. It has an extremely fast switching speed and can operate at very low voltages and temperatures. The standard breakdown voltage is 385V, and the maximum drain source voltage is 500V. Its low on-resistance makes it ideal for power switching applications.The IRF2204PBF is constructed with a four-layer insulated gate structure. It has both an intrinsic body and a gate oxide that provides electrical isolation between the gate and the body of the MOSFET. This allows the MOSFET to be driven by low voltage signals, while switching at higher voltages.MOSFETs are generally easier to control than bipolar transistors because they do not require a base current to turn them on. All the bias current required is supplied internally by the gate voltage. The gate of the MOSFET can thus be modulated between a positive potential, in order to turn on the device, and a negative potential, in order to turn it off. This is accomplished by controlling the voltage between the gate and the source of the device.The IRF2204PBF is a versatile device that is capable of withstanding high power dissipation and low on-state resistance. It is designed to withstand overvoltage and high temperatures, making it ideal for switching and motor control applications. Its low voltage gate drive allows for ease of functional integration into complex applications.The IRF2204PBF is an ideal choice for a wide range of applications. It combines high performance with a low power dissipation and a wide range of operating voltages. It is also well-suited for use in audio applications where low distortion and high efficiency are desired. It is also an excellent solution in power conversion applications due to its low turn-on and turn-off times, making it suitable for a number of switch mode power supplies.In summary, the IRF2204PBF is a highly versatile MOSFET. It offers excellent performance in a variety of applications, particularly in power management and switching, audio, data and signal processing, and motor control. It is also an ideal choice for audio applications, offering low distortion and high efficiency. Its high power dissipation and low on-state resistance, combined with its ease of functional integration, make it an attractive choice for many applications.

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