IRF2804

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	330W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6450pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRF2804 is a P-Channel Metal—Oxide—Semiconductor (MOS) filed effect transistor (FET) designed for power management applications. This device is designed for efficiency with very low gate charge and is ideal for applications requiring load and line regulation. The FET has very low on-resistance and output capacitance, making it an excellent choice for high frequency switching applications that operate at high-demand currents, and small gate drive capabilities.To better understand the application of IRF2804, it is important to first understand its working principle. An FET is a type of transistor that operates by controlling the flow of electrons with the application of an electric field. This electric field is created by applying a voltage at the gate. When the voltage is applied, the gate field covers the whole channel of the FET and attracts the electrons to it, allowing current to flow in the channel from source to drain. The higher the voltage, the stronger the field and the greater the current that can flow through the FET.The voltage applied to the gate of the FET determines its “Threshold Voltage”, which is the minimum voltage required for the FET to be “turned on”. The amount of current that the device can source is determined by the size of the gate, which defines how many electrons can be packed into the gate. The larger the gate, the bigger the current that can be sourced and the higher the voltage that can be applied to the gate.The main applications of IRF2804 include switch mode power supplies (SMPS) and load switch circuits. In SMPS, the IRF2804 is used to regulate the power being delivered to a load, while at the same time providing high efficiency. In load switch circuits, the FET is used to switch high voltages, thus avoiding a high power losses in the switch.IRF2804 is also ideal for applications that require high voltage and current, such as hot swap circuits, motor speed control and lamp dimming. The FET is rugged enough to handle high voltage and current levels, while still providing high efficiency.In addition to the switch mode power supply and load switch applications, IRF2804 can also be used in amplifier circuits, logic circuits and delay circuits. The low on-resistance of IRF2804 makes it ideal for high-frequency applications such as amplifier circuits, while its logic-level operation makes it well suited for logic circuits. Finally, the low capacitance of IRF2804 makes it particularly suitable for delay circuits, where the FET is used to control the speed of the circuit.Overall, IRF2804 is an extremely useful device for applications that require high switching frequencies and efficient power control. The device is rugged enough to handle high current and voltage levels and has a very low on-resistance which makes it ideal for high frequency applications. The logic-level operation of the device also makes it well suited for logic and delay circuits.

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