
Allicdata Part #: | IRF2804STRL-ND |
Manufacturer Part#: |
IRF2804STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 330W (Tc) Surface Mount D2P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF2804STRL Application Field and Working Principle
IRF2804STR is an N-Channel Enhancement Mode Field Effect Transistor which is useful in many industrial power and switching applications. As one of the most popular Field Effect Transistors on the market, it is widely used in high-frequency and high-speed switching, as well as in general-purpose and small-signal amplifying applications. Its low equivalent on-resistance, high performance, and low noise make it a perfect solution for the modern era of electronics.
In terms of its application field, IRF2804STR is commonly used in linear adjustable regulated power supplies, switch mode power supplies, RF and microwave communications systems, automotive circuit, and audio power amplifiers. The device is also used for motor speed controllers, as well as for controlling the current to drive or switch LEDs, LCDs, and other displays. Finally, this device can be used in other power management circuits and AC/DC converters.
As far as working principle is concerned, IRF2804 STR works on the principle of FETs (Field Effect Transistors). In FETs, the current passing through the semiconductor channel is controlled by the electric field between the drain and the source. When the electric field is present, electrons in the channel move and allow current to flow through the device. The channel can be "turned on" or "off" depending on the electric field, which is controlled by the gate voltage.
A typical circuit is composed of an IRF2804STR, a gate voltage source, a source resistor, and a load resistor. When the gate voltage is applied, a small current flows from gate to source through the small-signal equivalent on-resistance, RDS (ON). This current controls the current flow from source to drain, which is called drain current, ID. If the gate voltage is increased, the Drain-Source resistance (rds) will be decreased. Usually, the typical threshold voltage of IRF2804STR falls between 4V to 8V.
The basic operating principle of any device can be described as follows: the gate voltage, Vgs, controls the drain-source voltage, Vds, and the drain current, Id. This can be understood by the analogy of a leaky water pipe. In this analogy Vds represents the pressure in the pipe and Id represents the flow rate of the water. The gate voltage controls the pressure, which in turn controls the flow rate. If the gate voltage is increased, the pressure in the pipe increases, resulting in more water flowing through.
Apart from the typical threshold voltage of IRF2804STR, this device has other parameters such as Drain Current, Drain-Source Voltage, and Power Dissipation that will affect its performance. The operating temperature of this device should also be kept under 85 degrees Celsius for best functional performance.
In conclusion, IRF2804STR is a useful field effect transistor that is widely used in many industrial power and switching applications. Nowadays, its low equivalent on-resistance and low noise make it an ideal solution for modern electronics. This device works on the principle of FETs, where the current passing through the semiconductor channel is ultimately controlled by the electric field between the drain and the source.
The specific data is subject to PDF, and the above content is for reference
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