Allicdata Part #: | IRF2807ZSPBF-ND |
Manufacturer Part#: |
IRF2807ZSPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 75A D2PAK |
More Detail: | N-Channel 75V 75A (Tc) 170W (Tc) Surface Mount D2P... |
DataSheet: | IRF2807ZSPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 53A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF2807 is an advanced N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is commonly used in power supply circuitry. It is designed to provide low on-resistance and a wide range of operating voltages, making it a reliable and efficient device for various industrial applications. The IRF2807ZSPBF is specifically designed for applications requiring low RDS(ON) and low gate charge. In this article, we will discuss the application field and working principle of the IRF2807ZSPBF.
The IRF2807ZSPBF is suitable for use in a wide range of power supply designs. This MOSFET device can be used as a switch or gate in a variety of power supply circuits, such as DC-DC converters, power factor controllers, PWM controllers, and more. Its low RDS(ON) ensures it is highly efficient, making it a great choice for applications that require power efficiency. Additionally, its low gate charge helps reduce switching losses and provides faster switching operation, which is beneficial for applications that require frequent switching. The wide range of operating voltages for this MOSFET also make it a great choice for systems that require different voltage levels.
The working principle of the IRF2807ZSPBF is based on the concept of a field-effect transistor. This type of transistor uses an electric field to control current flow through the channel. In the IRF2807ZSPBF, the channel is an N-type semiconductor material and the electric field is created by the voltage applied to the gate terminal of the transistor. When the gate voltage is increased, the electric field increases as well, which attracts electrons to the channel, allowing current to flow through it. When the gate voltage is decreased, the electric field decreases, which pushes the electrons out of the channel and blocks current flow.
The IRF2807ZSPBF is a great choice for a variety of power supply designs, thanks to its low RDS(ON) and low gate charge. Its wide range of operating voltages also makes it highly versatile and able to be used in a variety of applications. The IRF2807ZSPBF is also a good choice for power supplies that require high speed switching due to its fast switching times. Furthermore, its working principle of using an electric field to control current flow is reliable and efficient as well.
The specific data is subject to PDF, and the above content is for reference
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