IRFM120ATF Discrete Semiconductor Products

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IRFM120ATF is a unique field effect transistor (FET) from International Rectifier Corporation. It is a single, dual-gate MOSFET with a drain-gate breakdown voltage of 40 volts. The IRFM120ATF is used in many applications, such as switching, DC/DC conversion, audio amplifier circuits, and switching power supplies. It is available in a wide range of packages, making it suitable for use in many different configurations.

In order to understand its operation, it is necessary to understand some of the basics of FETs. A FET is a type of transistor that utilizes an electric field to control the flow of electrons across a p-n junction. The electric field creates a barrier that prevents electrons from passing through the p-n junction. FETs are used in many different applications, including amplifiers, switches, voltage regulators, and more.

The IRFM120ATF has a maximum drain-gate threshold voltage of 4.0 volts, a maximum gate-drain breakdown voltage of 8.0 volts, and a maximum drain current of 1.2 amps. It has a maximum power dissipation of 8.2 watts and is available in different case packages. The IRFM120ATF is a unique field effect transistor (FET) because it has dual-gate construction, which allows for greater control over the device\'s output than a single-gate FET.

The IRFM120ATF is a single-gate, dual-gate MOSFET that is well suited for use in many applications. Its dual-gate construction allows for greater control over the device\'s output than a single-gate FET, making it very useful in audio amplifier circuits and switching power supplies. The IRFM120ATF can also be used as a switch in DC/DC conversion circuits, giving it the ability to efficiently switch between high and low input voltages.

The IRFM120ATF is designed to be extremely reliable, with a maximum drain-gate breakdown voltage of 40 volts and a maximum gate-drain breakdown voltage of 8.0 volts. This makes it an ideal choice for use in high voltage applications. Additionally, the device features an industry-standard package, making it easy to integrate into any system.

In summary, the IRFM120ATF is a unique single-gate, dual-gate MOSFET that is well suited for many applications. It is designed for high performance and reliability, making it an ideal choice for use in many systems. With its industry-standard package and dual-gate construction, the IRFM120ATF is a great choice for engineers looking to incorporate a reliable, efficient switching device into their projects.

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