IRFM220BTF_FP001 Allicdata Electronics
Allicdata Part #:

IRFM220BTF_FP001-ND

Manufacturer Part#:

IRFM220BTF_FP001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 1.13A SOT-223
More Detail: N-Channel 200V 1.13A (Tc) 2.4W (Ta) Surface Mount ...
DataSheet: IRFM220BTF_FP001 datasheetIRFM220BTF_FP001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 800 mOhm @ 570mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.4W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-4
Package / Case: TO-261-4, TO-261AA
Description

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IRFM220BTF_FP001 is a single N-Channel enhancement mode power field-effect transistor (FET). This type of transistor is used mostly in low to moderate power switching applications, such as amplifier circuits. It is made with a planar process and can be used in all types of switching applications.

The IRFM220BTF_FP001 has a breakdown voltage of 40V, and can handle a maximum current of 11.5A. It has a wide voltage range of 4.5V to 25V and a maximum power dissipation of 15W. It has good switching speed, low on resistance and good surface mountability. It is suitable for use in DC/DC converters, motor control and communication circuits.

The IRFM220BTF_FP001 also features a low on-resistance, which gives it excellent efficiency and power density when used with suitable drivers. It has an operating temperature range from -55°C to +150°C and is available in a through-hole TO-220 package. It is also RoHS compliant and halogen free.

The working principle of the IRFM220BTF_FP001 is quite simple. When it is supplied with a voltage (VGS), current will flow between the source and the drain. If the voltage is high enough, the transistor will turn on, allowing the current to flow. The amount of current flowing can be controlled by varying the voltage applied to the gate, allowing the transistor to act as a switch.

In addition to its power switching applications, the IRFM220BTF_FP001 can also be used as an amplifier. Its high current and voltage ratings allow it to be used in power audio amplifiers, as well as current sources and current mirrors. It can also be used in circuit protection, because its maximum current and voltage ratings provide robust protection against overvoltage and overcurrent conditions.

The IRFM220BTF_FP001 is a versatile transistor that can be used in many different applications. It has good switching speed, low on resistance and good surface mountability, making it ideal for use in low to moderate power switching applications. Its high current and voltage ratings make it suitable for use in power audio amplifiers and circuit protection.

The specific data is subject to PDF, and the above content is for reference

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