Allicdata Part #: | IRFM210BTF_FP001-ND |
Manufacturer Part#: |
IRFM210BTF_FP001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 0.77A SOT-223 |
More Detail: | N-Channel 200V 770mA (Tc) 2W (Ta) Surface Mount SO... |
DataSheet: | IRFM210BTF_FP001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 770mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 390mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223-4 |
Package / Case: | TO-261-4, TO-261AA |
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IRFM210BTF_FP001 is a transistor, which belongs to the family of FETs (Field Effect transistors) and, more precisely, to the subgroup of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). This type of transistor is unique as it belongs to the single FETs category, which means that it is composed of a single structure.
This type of transistor has several unique characteristics, which make it advantageous to use in different types of electrical applications requiring high performance and low power consumption. It is particularly useful in applications such as audio, digital, and LED lighting applications, due to its high operating switching speeds.
The IRFM210BTF_FP001 transistors use metal oxide technology, which is designed to provide a higher switching capability than a conventional transistor. It has a very small footprint, making it ideal for a wide range of applications where space is limited. Additionally, this type of transistor also has remarkable characteristics, such as low power-consumption, high switch-on resistance and high THD levels.
When it comes to the working principle of IRFM210BTF_FP001 transistors, they operate by allowing a small amount of current to flow when a low voltage is applied to its gate. When the voltage is increased, the current flow increases, and the transistor starts to conduct. The IRFM210BTF_FP001 transistors are able to reach a very high switching frequency, which has important implications for applications such as low power and digital designs.
In digital designs, the power savings are even greater because the IRFM210BTF_FP001 transistors typically switch much faster than other types of transistors. This characteristic makes them ideal for digital designs such as audio amplifiers or digital circuitry.
IRFM210BTF_FP001 transistors are also very accurately modeled in software simulations and can be used in various types of circuit simulations. This is useful for engineers who need to accurately model a system in order to optimize design parameters.
In conclusion, the IRFM210BTF_FP001 transistors are the ideal choice for many applications seeking high performance and low power consumption. Its unique characteristics are ideal for a wide range of electrical applications, ranging from audio to LED lighting. Its small footprint makes it perfect for limited space applications, while its high switching speeds and low power consumption make it ideal for digital and audio designs. Furthermore, its modelling accuracy in software simulations makes it a great choice for engineers looking to optimize system designs.
The specific data is subject to PDF, and the above content is for reference
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