Allicdata Part #: | IRFM460-ND |
Manufacturer Part#: |
IRFM460 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 19A TO-254AA |
More Detail: | N-Channel 500V 19A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | IRFM460 Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 250W (Tc) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-254AA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
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The IRF M460 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a high-voltage, high-performance MOSFET that is specifically designed for automotive applications. Designed for efficient saturation performance, it is ideal for power switching design, where highly efficient switching devices are required in order to minimize power losses, especially at high switching frequencies. It is available in a TO-220 package and is capable of handling drain-source voltage of up to 500 volts.
The IRF M460 is a single-n-channel, enhancement-mode vertical transistor with a gate-source voltage rating of -20V to +20V. It has a drain-source breakdown voltage of 500V and an avalanche energy rating of 400mJ. It has a current rating of 16A and a power dissipation of up to 46W. This is considered to be an excellent performance figure for its package size.
The IRF M460 is primarily designed for automotive applications, such as electric power steering (EPS) and body computerized systems. It is also suitable for applications such as lighting, home appliance control, motor drive, and other industrial and consumer applications. The fast switching speed of the IRF M460 results in improved system responsiveness, particularly in automotive applications.
The working principle of MOSFETs is based on the flow of charge carriers. The voltage applied to the gate terminal determines the amount of current that is allowed to flow between the drain and the source. The channel of the MOSFET is essentially a one-way valve, which can be controlled by the gate voltage. Increasing the gate voltage turns the transistor on, allowing current to flow between the drain and the source; decreasing the gate voltage turns the transistor off, preventing current from flowing.
The IRF M460 uses the vertical structure, allowing for the flowing current to pass through a larger area and thus provide higher current handling capability. Its symmetric construction gives a well-defined and repeatable turn-on and turn-off characteristics, resulting in better switching performance and higher efficiency. Its low gate charge and low power consumption make it ideal for automotive applications.
The IRF M460 is designed to offer excellent performance as a power switching device, with a high maximum drain-source voltage and a fast switching speed. It is an ideal choice for automotive, industrial and consumer applications, where reliable power switching is required and space is at a premium.
The specific data is subject to PDF, and the above content is for reference
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