IRFML8244TRPBF Allicdata Electronics
Allicdata Part #:

IRFML8244TRPBFTR-ND

Manufacturer Part#:

IRFML8244TRPBF

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 5.8A SOT23
More Detail: N-Channel 25V 5.8A (Ta) 1.25W (Ta) Surface Mount S...
DataSheet: IRFML8244TRPBF datasheetIRFML8244TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.04800
10 +: $ 0.04656
100 +: $ 0.04560
1000 +: $ 0.04464
10000 +: $ 0.04320
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 10µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFML8244TRPBF is an N-Channel HEXFET power MOSFET. It is a member of the HEXFET Power MOSFET family of controllers. This MOSFET offers optimized performance and low on-resistance for driving high-speed logic, power and applications. The advanced design of the HEXFET family of controllers is capable of providing optimized switching performance with accurate current control. These devices are designed for use in power switching, power supplies, motor drives, computer systems and light industrial applications.

Application Field of IRFML8244TRPBF

IRFML8244TRPBF is primarily used for switching motors and high-power loads, as well as for power control, lighting, and communications system applications. This MOSFET provides constant voltage regulation and low on-resistance for high efficiency, as well as improved performance when compared to standard Surge-Mode Power MOSFETs. The device also has built-in gate protection and fast switching times, making it ideal for power-level components in high-energy systems.

Working Principle of IRFML8244TRPBF

The working principle of IRFML8244TRPBF is based on the MOSFET switching mechanism. In a MOSFET, an electric current passes through a gate between source and drain, which allows the current to pass through the channel. This process is controlled by the voltage of the gate, which is usually equal to the drain voltage.

In the case of IRFML8244TRPBF, the gate has an insulated gate structure that provides excellent performance for high switching speeds. It also provides low on-resistance for lower RDS (on) power losses, which helps to conserve energy. The device also features a built-in gate protection circuit, which prevents damage to the MOSFET by preventing over-current and over-voltage conditions.

Further, IRFML8244TRPBF has a built-in current-sense resistor, which provides an accurate feedback when the device is being subjected to over-current conditions. Its low-voltage turn-on feature allows the MOSFET to be used efficiently in power converter applications. Moreover, this MOSFET can be used in a wide range of applications including automotive, industrial, and consumer appliances.

The innovative HEXFET power MOSFET of IRFML8244TRPBF offers excellent power conversion efficiency and switching performance, as well as low on-resistance losses and fast switching speed. This device is ideal for driving high speed logic, power, and applications where efficient, reliable operation and high switching speeds are required.

The specific data is subject to PDF, and the above content is for reference

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