IRG4BC15UD-S

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IRG4BC15UD-S is a product in the range of single IGBTs (Insulated Gate Bipolar Transistors) that provides improved switching performance over the previous IRG4BC15UD model. It has been specifically designed for low to medium frequency applications in both consumer and industrial uses. This device offers a range of features that make it very suitable for various applications, such as motor drives and inverter controls.

The IRG4BC15UD-S is an ideal choice for applications where power losses and efficiency are of great importance. It has an isolated gate structure with low saturation voltage, allowing low conduction losses while providing a high switching frequency. In addition, the integrated Fast Recovery Diode (FRD) and ultra-low body diode characteristics help to minimize switching losses in applications such as motor drives. The package of this product also features a high-temperature pad with a wide temperature range for better heat dissipation.

The IRG4BC15UD-S has a maximum collector to emitter voltage of 1500V and a maximum collector current of 15A. This device has a high safe operating area (SOA) up to twice the nominal RMS current rating. It exhibits excellent device stability under a variety of operating conditions, making it suitable for a wide range of applications. As well as having a broad range of input gate signals, including gate drive capability up to 10V.

The working principle of the IRG4BC15UD-S is based on a combination of the conducting properties of bipolar transistors and complementary field-effect transistors. The Bipolar Junction Transistor (BJT) is operated in the active region and is used to control the currents flowing in both directions between collector and emitter. The iffet transistors are connected in Cross-Coupled VCC pairs, allowing one of the transistors to conduct current from the supply line and the other to conduction to ground.

These two transistor types are connected in such a way so that when a voltage is applied to the gate of either one it turns on and the other turns off. This is typical of many IGBTs, as it allows them to be controlled by changing only the gate voltage of one of the field-effect transistors. This makes them highly efficient as it enables them to switch very fast and with low losses.

The IRG4BC15UD-S is a very high performance and cost-effective device, which is why it has found so many applications in various industries. These include low and medium frequency drive, inverters, solar power systems and high voltage power supplies. It is an excellent choice for those who are looking for an efficient and reliable IGBT solution.

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