IRG4BC30W-STRLP

Power - Max:	100W
Base Part Number:	IRG4BC30W-SPBF
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C:	25ns/99ns
Gate Charge:	51nC
Input Type:	Standard
Switching Energy:	130µJ (on), 130µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 12A
Current - Collector Pulsed (Icm):	92A
Current - Collector (Ic) (Max):	23A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The IRG4BC30W-STRLP is a member of the family of IGBTs (Insulated Gate Bipolar Transistors) and falls into the category of single transistors. This family includes various techniques, like those used in power control and switching technologies, allowing for higher control of power flow and switching in electronic circuits. An IGBT is an electronic switch, analogous to a simple metal-oxide semiconductor field-effect transistor (MOSFET), however with the added benefit of high efficiency, better characteristics and a variety of ratings. Unlike conventional transistors, the IGBT can be used in higher current applications. The IRG4BC30W-STRLP is a high voltage, high current, insulated gate bipolar transistor which boasts very low losses for fast switching applications. The IRG4BC30W-STRLP is designed to be used in applications such as inverters, welders, UPS systems, DC motor control, power conversion, and much more. By incorporating it into these circuits, current switching is achieved much more efficiently and faster than typical semiconductors. As a result, the need for external components such as diodes and flyback transformer has been eliminated, simplifying the design and reducing the overall size of the circuit. When it comes to how the IRG4BC30W-STRLP works, it is based on the basic development of other transistors. The major difference between the IRG4BC30W-STRLP and other transistors is that it is a combination of both an n-channel and p-channel MOSFET, connected in the case. It is the combination of both an N-Channel MOSFET and P-Channel MOSFET that gives this transistor its unique characteristics, and sets it apart from other transistors. The IRG4BC30W-STRLP is capable of producing high levels of efficiency due to its low on-state voltage which can be as low as 1.2V for a given applied voltage of up to 600V. Its tight tolerance specifications further enhance efficiency, as the rated current can be accurately controlled. Additionally, the IGBT has a wide operating temperature range, making it suitable for use in a variety of environments. The IRG4BC30W-STRLP is constructed from four terminals and two IGBTs. The terminals consist of the Drain, Source, Source-commanded and Emitter. For reliable operation, it is important to maintain correct polarity on the gate and source terminals. The two IGBTs are connected in reverse parallel, using the collector to control their gates. In comparison to surge-blocking devices or conventional transistors, the IGBT has an inherent advantage in terms of speed and dissipation.To summarize, the IRG4BC30W-STRLP is a single transistor belonging to the family of IGBTs. This transistor can be used in applications such as inverters, welders, UPS systems, and DC motor control due to its high efficiency, low on-state voltage, and wide operating temperature range. This transistor is constructed from four terminals, with two IGBTs connected in reverse parallel. As a result, it is one of the more reliable power control and switching technologies available today.

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