IRG4BC40SPBF Allicdata Electronics
Allicdata Part #:

IRG4BC40SPBF-ND

Manufacturer Part#:

IRG4BC40SPBF

Price: $ 2.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 60A 160W TO220AB
More Detail: IGBT 600V 60A 160W Through Hole TO-220AB
DataSheet: IRG4BC40SPBF datasheetIRG4BC40SPBF Datasheet/PDF
Quantity: 286
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.21760
10 +: $ 1.99395
100 +: $ 1.63384
500 +: $ 1.39084
1000 +: $ 1.17300
Stock 286Can Ship Immediately
$ 2.44
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Power - Max: 160W
Switching Energy: 450µJ (on), 6.5mJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 22ns/650ns
Test Condition: 480V, 31A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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The IRG4BC40SPBF is a type of single IGBT (Insulated Gate Bipolar Transistor) which can be used in a wide range of applications that require both high power handling and high switching speeds.

IGBTs are basically a combination of a MOSFET (Metal-Oxide Silicon Field Effect Transistor) and a bipolar transistor. A MOSFET is a unipolar device, meaning it uses just one type of carrier, while a bipolar transistor uses both holes and electrons as charge carriers. By combining these two devices, IGBTs offer a unique combination of extremely high power density with fast switching speeds, making them ideal for use in power electronics applications. The IRG4BC40SPBF is a standard single IGBT, meaning it has only one base, one collector, and one emitter.

The IRG4BC40SPBF can be used in a variety of applications, including motor drives, power converters, power control, and lighting. When used in motor drives, it can provide increased power and control, by providing a higher voltage level than a traditional MOSFET. This makes it suitable for use in high-power applications such as electric vehicles. In lighting applications, the IRG4BC40SPBF can be used to switch high-voltage LEDs and other types of lights, in order to control brightness and reduce power consumption.

The IRG4BC40SPBF has a maximum voltage of 600V and a maximum current of 40A. It also features a low turn-on loss, making it perfect for use in applications with high input frequencies, such as variable frequency drives. Additionally, the IGBT has an integrated anti-parallel freewheeling diode, making it more efficient than a standard MOSFET.

The IRG4BC40SPBF works similarly to a standard MOSFET, with the additional gate bias. When the gate voltage is positive relative to the emitter, the IGBT becomes turned on and acts like a standard MOSFET. When the gate voltage is negative, the IGBT becomes turned off and the anti-parallel diode takes over and allows the current to flow. This reduces the amount of power needed to switch the IGBT, as well as reducing ringing due to the diode\'s inductive characteristics.

The IRG4BC40SPBF is a great choice for any application that requires both high power handling and fast switching speeds. It can be used in motor control, power conversion, and lighting applications, as well as providing efficient power control for variable frequency drives. Additionally, its integrated anti-parallel diode ensures efficient operation and reduces ringing due to inductive characteristics.

The specific data is subject to PDF, and the above content is for reference

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