IRG4RC10SDTRPBF

Switching Energy:	310µJ (on), 3.28mJ (off)
Base Part Number:	IRG4RC10SDPBF
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	28ns
Test Condition:	480V, 8A, 100 Ohm, 15V
Td (on/off) @ 25°C:	76ns/815ns
Gate Charge:	15nC
Input Type:	Standard
Series:	--
Power - Max:	38W
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 8A
Current - Collector Pulsed (Icm):	18A
Current - Collector (Ic) (Max):	14A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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IRG4RC10SDTRPBF Application Field and Working PrincipleIRG4RC10SDTRPBF, also known as Insulated Gate Bipolar Transistor (IGBT), is a type of transistor that is used to control very high currents and voltages. It combines high voltage and current carrying capabilities with high switching speed, making it one of the most versatile semiconductor devices. The IRG4RC10SDTRPBF is a single IGBT that is used for a variety of applications including motor control, power factor correction, solar drive systems, electronic lighting, industrial inverters, and many other high power and high voltage applications.An IGBT is composed of two primary components: an insulated gate and a bipolar junction transistor (BJT). The insulation layer between the two components is what allows the device to be classified as an Insulated Gate Bipolar Transistor (IGBT). The insulated gate is composed of metal oxide semiconductor (MOS) technology, which is responsible for the switching capability of the IGBT. The bipolar junction transistor (BJT) is responsible for the high current and voltage carrying capabilities of the device.The IRG4RC10SDTRPBF IGBT uses a gate voltage to control the junction between the gate and the emitter. When the gate voltage is applied to the junction, electrons can be pulled across the junction, which in turn allows the current to flow through the emitter-base-collector path of the bipolar junction transistor (BJT) and establish conduction between the collector and emitter. When the gate voltage is removed, the current stops flowing and the device is in its off or non-conductive state.The IRG4RC10SDTRPBF IGBT offers a wide range of switching speeds, with an operating frequency range of 5 KHZ - 200 KHZ, a current capacity of 600 Amperes peak and a voltage rating of 600 Volts. It also offers a low on resistance which allows for higher switching efficiency and lower power losses. Additionally, since the device does not require an additional base current for conduction, it helps to reduce power consumption.The IGBTs are capable of performing a variety of functions due to their unique characteristics, such as linear amplification, pulse width modulation and other power switching applications. They are also used in the production of AC and DC motors, as well as in the generation of high power density switch mode power supplies. Due to their high current and voltage carrying capacity, they are also used in gas discharge lamps and other light emitting diodes (LEDs).The IRG4RC10SDTRPBF is an ideal choice for high power applications due to its low on-resistance and high current capacity. It is also an excellent choice for energy efficiency and cost saving applications as its switching capabilities help to reduce power losses and reduce maintenance costs. The IGBT’s versatility and reliability make it an ideal choice for any application requiring high power and voltage.

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