IRG4BC20SPBF Datasheet/PDFIRG4BC20SPBF Application Field and Working Principle
IRG4BC20SPBF is a high power IGBT (Insulated Gates Bipolar Transistor) module with low on-state voltage drop, high speed and superior ruggedness.
Inverter duty applications associated with AC & DC motor drive, photovoltaic (PV) systems, domestic appliances, and industrial automation are some of the popular application fields of the device. The module offers an integrated fast recovery diode with superior dV/dt capabilities.
Overview: an introduction
IRG4BC20SPBF is a common emitter based planar IGBT module. The joining technology of fast recovery diode (FRD) and IGBT chip makes it an ideal candidate for fast switching and increased reliability. With Tjmax of 175 °C and VCE(sat) of 2.1 V, it offers fast switching high frequency operation with minimal internal losses.
IRG4BC20SPBF incorporates reverse polarity protection and a positive predriver stage to ensure reliable operations.
Pin Configuration:
The IRG4BC20SPBF has a common emitter with 4 pins where Pin1 is Collector, Pin2 is Emitter, Pin3 is Gate, and Pin4 is the Emitter of the fast recovery diode. A common emitter configuration is opted due to its superior gains and ruggedness.
Working Principle:
When the voltage applied between Pins1 and 2 is higher than the threshold voltage (Vth), the IGBT gets turned ON and electrons can pass through the transistor. The result is that current will flow between Pin1 and 2. The IGBT will remain ON when VCE(On) is greater than Vth.
When VCE falls below Vth, the IGBT will turn OFF and the IGBT can be used as an open switch where no current will flow between Pin1 and 2. The IGBT will remain OFF when VCE(Off) is less than Vth.
This process is known as turn-on/off of IGBT and used in different applications to act as a switch.
Typical Application:
IRG4BC20SPBF is frequently used in DC to AC power converters, chargers, and UPS systems due to its excellent performance in continuous conduction mode. This device can also be utilized in motor control and medical imaging applications.
Advantages:
- Durable and robust
- Low internal resistance
- Minimal switching losses
- High speed operation
Limitations:
- Requires external reverse polarity protection
- Susceptible to temperature and thermal cycling
- Requires separate gate drive for the IGBT and the FRD
Conclusion:
IRG4BC20SPBF is a high power IGBT module suitable for inverter duty applications with its high speed performance, low on-state voltage drop, and superior ruggedness. The integrated fast recovery diode offers increased dV/dt capabilities. However, this device requires separate gate drive for the IGBT and the FRD, and is susceptible to temperature and thermal cycling.