IRG4BC30FD-SPBF

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IRG4BC30FD-SPBF is a 600 V, Zero Recovery Field-stop IGBT with soft diode, it has negative Vce(on) with two generations commutation imporovement. IGBTs are widey used power semiconductor devices. They have a structure that is a combination of the bipolar junction transistor and the field effect transistor. IRG4BC30F-SPBF belongs to the family of field stop IGBTs which are available in bout 600V and 1200V voltage.

Application field of IRG4BC30FD-SPBF

Due to its features and high performance, IRG4BC30FD-SPBF is highly suited for a variety of applications. The high current capability, high efficiency, and low driving losses of this device make it suitable for power factor correction, dc-dc converter, electric motor and general purpose application. The Zero Recovery Field-Stop IGBT technology provides best in-class Vce(tol) characteristics avoiding current maldistribution and assuring efficient parallel operation and applications above 900 VAC.

Working Principle

The iRg4bc30fd-spBf, Field-Stop IGBT is based on the Insulated gate bipolar transistor (IGBT). In order to obtain low gate charge device and improve switching characteristics, this IGBT uses a vertical power structure, utilizing double-diffused planar technology. The operation of this IGBT is similar to that of a depletion type MOSFET, but with improved switching capability. The gate voltage controls the current between the collector and the emitter. When the drive base current is increased, a potential is built between the gate and the emitter and the MOSFET is turned ON. The voltage drop between the collector and emitter then becomes slightly lower than with a MOSFET due to the higher reverse breakdown voltage of the IGBT.

The integration of an IGBT, a free-wheeling (anti-parallel) diode and a jumper is of great benefit for parallel operation of IGBTs. Diodes are typically connected anti-parallel to the IGBTs and function as a freewheeling diode. This is necessary to allow the current flowing in the device to have a return path when the IGBT is turned off and the voltage across the device starts to flux. This soft diode technology reduces diode conduction losses in power modules and provides the embedded jumper for parallel operation of IGBTs.

IRG4BC30FD-SPBF IGBT also provides an optimum combination of blocking as well as switching performances. This is due to its planar structure which facilitates optimal thermal management and results in high current capability, high efficiency and low driving losses, even at extreme temperature & switching frequencies.

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