IRG4IBC30WPBF

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The IRG4IBC30WPBF is part of the series of discrete IGBTs developed by international rectifier corp. It is a three-terminal device that features low conduction and switching losses. It is suitable for applications in various industries including motor control, switched-mode power supplies, battery systems and power inverters. This device is based on a Trench/FieldStop IGBT technology with HiPerFET drive and gate control.

The IRG4IBC30WPBF is a 30A device with a VCE of 600v. It is a NPT (non-punch-through) and MOS gate driver optimized IGBT with an RDS(on) rating of 4mOhm. The device has a built-in frequency dithering circuitry to provide excellent EMI reduction. The device also includes an ESD protection system.

The IRG4IBC30WPBF is specially designed for high-power applications with high efficiency requirements. It has an inherently low switching time, with a turn-on time of 250ns and a turn-off time of 150ns. This allows it to deliver one of the best performances available in the market.

The working principle of the IRG4IBC30WPBF is straightforward. When the voltage across the device is larger than a certain level, known as the turn–on threshold voltage, the IGBT turns on and current flows through it. When the voltage drops below the turn-off threshold voltage, the IGBT switches off and current ceases to flow. This process is controlled from the gate connections, where a steady, low voltage is applied to the gate of the device to maintain the desired state.

The IRG4IBC30WPBF is applicable for a number of uses. It is suitable for use in motor controlling and switching circuits, it can be used as a rectifier, and it is a suitable choice for high power switching circuits, power supplies, and inverters. It is also suitable for use in automotive battery systems and can be used to construct power inverters. It is also suitable for various high-efficiency switching applications in various industries.

In conclusion, the IRG4IBC30WPBF is an excellent IGBT device with improved features such as low conduction and switching losses, high efficiency, and ESD and EMI protection. It is perfect for a variety of high-power applications and is suitable for use in most industries. Its working principle is based on a Trench/FieldStop IGBT with HiPerFET drive and gate control, and it offers excellent performance and reliability.

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