| Allicdata Part #: | IRG4RC10KTRR-ND |
| Manufacturer Part#: |
IRG4RC10KTRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 600V 9A 38W DPAK |
| More Detail: | IGBT 600V 9A 38W Surface Mount D-Pak |
| DataSheet: | IRG4RC10KTRR Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
| Power - Max: | 38W |
| Base Part Number: | IRG4RC10K |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 480V, 5A, 100 Ohm, 15V |
| Td (on/off) @ 25°C: | 11ns/51ns |
| Gate Charge: | 19nC |
| Input Type: | Standard |
| Switching Energy: | 160µJ (on), 100µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.62V @ 15V, 5A |
| Current - Collector Pulsed (Icm): | 18A |
| Current - Collector (Ic) (Max): | 9A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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The IRG4RC10KTRR is a short-circuit-proof, isolation-level rated IGBT module. It is rated for 75A continuous current and 600V collector-emitter voltage. As one of the most popular IGBT modules on the market, it is designed for applications such as motor control, solar power conversion, industrial automation, and power supplies. This article will provide an overview of the IRG4RC10KTRR\'s application field and working principle.
Application Field
The IRG4RC10KTRR is designed to provide excellent power conversion performance in a variety of applications, including motor control, solar power conversion, industrial automation, and power supplies. It has a high current carrying capacity and a wide operating temperature range, allowing for it to operate effectively in a number of different industrial settings. It also offers low capacitance, which helps reduce power loss and improves overall efficiency. As a result, the IRG4RC10KTRR is well-suited for applications where power efficiency is a primary concern.
Working Principle
The IRG4RC10KTRR utilizes IGBT (Insulated Gate Bipolar Transistor) technology. IGBTs are essentially a combination of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a bipolar junction transistor (BJT) in a single package. This allows for the IGBT to provide the benefits of both technologies. Specifically, the IGBTs allow for enhanced control and improved efficiency compared to traditional BJTs. This is achieved through the use of insulated gate electrodes that allow for the control of the voltage and current with high speed switching. This also allows for lower switching losses, reduced power consumption, and increased protection from short circuit conditions.
The IRG4RC10KTRR is an ideal choice for applications that require high performance power conversion, such as motor control, solar power conversion, industrial automation, and power supplies. Its excellent current carrying capacity and wide operating temperature range make it a reliable choice for a variety of applications. In addition, its low capacitance reduces power loss and improves overall efficiency, making it an ideal solution for applications where power efficiency is a primary concern.
The specific data is subject to PDF, and the above content is for reference
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IRG4RC10KTRR Datasheet/PDF