
Allicdata Part #: | IRGS4640DPBF-ND |
Manufacturer Part#: |
IRGS4640DPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE 600V 40A D2PAK |
More Detail: | IGBT 600V 65A 250W Surface Mount D2PAK |
DataSheet: | ![]() |
Quantity: | 1000 |
Switching Energy: | 115µJ (on), 600µJ (off) |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 89ns |
Test Condition: | 400V, 24A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 41ns/104ns |
Gate Charge: | 75nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 24A |
Current - Collector Pulsed (Icm): | 72A |
Current - Collector (Ic) (Max): | 65A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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IRGS4640DPBF is a popular insulated gate bipolar transistor (IGBT) component. It is a single-pole component with a rating of 650 volts, current rating of 46 amperes, and maximum power dissipation of 590 Watts. It is used in a wide range of applications, including renewable energy, industrial, lighting, and automotive fields.
This component has a special structure which makes it highly efficient and reliable. Its construction consists of the upper N-channel "MOSFET" and the lower P-channel "Diode", optimized for operation in high-voltage and high-current switching applications. The IGBT combines the preferred input and output characteristics of the MOSFETs and the Diode in a single component, with a smaller size and better performance.
IRGS4640DPBF has a very good turn-off or "switching" performance with very low "dV/dt" nose, making it suitable for use in high speed applications where fast and accurate power switching is needed. The component also has a very high "C-noise" (collision noise) suppression, making it ideal for applications with high noise tolerance levels.
In terms of operation and working principle, the IRGS4640DPBF works by the application of electronic pulses and voltages to the gate electrodes of the N-channel MOSFET and the P-channel diode, respectively. When the gate pulses are applied to the N-channel MOSFET, electrons are injected into its channel and turn it on. This in turn allows electrons to flow from the P-channel diode to the output. Conversely, when the gate pulse is removed, the P-channel diode turns on and begins to conduct current from the output to the gate electrode of the N-channel MOSFET, effectively turning the component off. This turns on the device.
When the device is in operation, the conduction of electrons across its components is governed by the voltage and current applied to the gate electrodes of the N-channel MOSFET and P-channel diode, respectively. The voltage and current can be adjusted to tailor the device’s switching speed or conduction period. By controlling the amount of current passing through the device, the IRGS4640DPBF can be used for applications requiring fast switching, or for applications requiring long conduction periods.
IRGS4640DPBF is highly reliable and can be used in a wide range of applications. It is widely used in renewable energy, lighting, automotive, and industrial applications for power conversion and control. It is suitable for use in switching applications where the efficiency and compatibility of the device play an important role. Additionally, it is also widely used in applications such as DC/DC converters, AC/DC converters, solid-state relays, automotive controls, and power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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