| Allicdata Part #: | IRLD014PBF-ND |
| Manufacturer Part#: |
IRLD014PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 1.7A 4-DIP |
| More Detail: | N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-D... |
| DataSheet: |  IRLD014PBF Datasheet/PDF |
| Quantity: | 1979 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRLD014PBF is a single source twin-FET integrated circuit, developed and manufactured by Infineon Technologies. It is used in several applications in the modern computing industry and is especially useful in higher-end graphics, as it provides higher current capabilities than most other single-source devices.
The IRLD014PBF consists of two MOSFETs, an N-channel and a P-channel, that are capable of providing up to 8A of drive current at an operating voltage of 0.8V to 35V. It supports drain-source voltage up to 33V and can withstand reverse transfer leakage up to 25mA. The insulated gate/drain structure enables higher efficiency, as it provides lower power dissipation and higher overload capabilities.
The IRLD014PBF operates using the Depletion-mode or Enhancement-mode modes of operation. In Depletion-mode operation, the transistor is on when the Gate voltage is at 0V. In Enhancement-mode, the transistor is off when the Gate voltage is at 0V. This makes the IRLD014PBF suitable for switching applications such as inverters, logic gates, & power controllers. It can also be used as an amplifier and is capable of providing a high-frequency switching functionalities.
The IRLD014PBF offers a variety of features that make it an ideal choice for various applications. It achieves high current capabilities and minimal noise levels, thanks to its insulated-gate/drain structure. It also offers the advantage of low on-resistance and low power dissipation. It also has a wide operating range of -55°C to 125°C, which makes it suitable for a wide range of environmental conditions. Finally, the IRLD014PBF offers functionality stability even at high-temperatures, making it an ideal choice for high-temperature applications.
The IRLD014PBF is one of the most reliable single-source FETs on the market thanks to its various advantages. It offers high current-handling capacities, low on-resistance, and wide operating temperature range. These advantages make the IRLD014PBF ideal for applications that require high current capabilities, such as DC-DC converters, motor controllers, audio amplifiers, and control systems. The IRLD014PBF\'s versatility makes it an ideal choice for a variety of different devices, including PCs, digital cameras, and smartphones.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| IRLD014 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.7A 4-DI... |
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| IRLD014PBF | Vishay Silic... | -- | 1979 | MOSFET N-CH 60V 1.7A 4-DI... |
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