IRLD110 Allicdata Electronics
Allicdata Part #:

IRLD110-ND

Manufacturer Part#:

IRLD110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 1A 4-DIP
More Detail: N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI...
DataSheet: IRLD110 datasheetIRLD110 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 600mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRLD110 application field and working principle encompasses the total solution package for digital logic and power control. This device is designed to work in a variety of applications from small digital signal control, to industrial power control, to generating digital signals for a wide range of instrumentation including power modules. This device is based on a Reverse Conducting MOSFET (ReCMOS) structure, and is manufactured in a small form factor, yet has a high current switching capacity. This article will provide an overview of the technology behind the IRLD110 application field and an explanation of its working principle.The IRLD110 is a single-gate MOSFET technology, which utilizes an n-type region with an opposing p-type region. When an electric field is applied between these regions, the MOSFET will conduct. The MOSFET can be used to control the flow of current in both directions and is thus suitable for all types of digital signal control applications. Additionally, the MOSFET is capable of switching high current and is thus suitable for industrial power control applications.

The IRLD110 features a low switching threshold voltage and low gate capacitance, resulting in low power consumption and high switching speeds. The MOSFET also features a high voltage breakdown voltage, allowing for use in medium and high voltage control applications. Additionally, the device has a temperature protective device, which allows for usage in high-temperature environments. Furthermore, the device is designed for use in both direct and reverse voltage application areas.

The working principle of the IRLD110 relies on the application of electric field. When the electric field is applied between the n-type and p-type regions, the MOSFET will conduct current. The device is able to accurately switch between on and off states depending on the applied electric field. Furthermore, the device is capable of controlling current flow in both directions and is thus applicable to both digital signal control applications, as well as industrial power control applications.

To use the IRLD110, the device needs to be connected to the appropriate circuit. Generally, the device is used in an inverter circuit; however, other circuits such as light dimmer circuits are also applicable. Once the device is connected, the device is capable of driving power and turning the connected load or circuit on and off depending on the applied electric field. The device is able to accurately switch between on and off states and is able to control the current flow in both directions.

The IRLD110 application field and working principle make it an ideal choice for a number of applications. The device is suitable for use in digital signal control, instrumentation, and industrial power control applications. Additionally, the device has a low power consumption and is capable of switching high current. Finally, the device has a temperature protective device, allowing for use in high-temperature environments.

The specific data is subject to PDF, and the above content is for reference

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