| Allicdata Part #: | IRLD120-ND |
| Manufacturer Part#: |
IRLD120 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 1.3A 4-DIP |
| More Detail: | N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-... |
| DataSheet: |  IRLD120 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 270 mOhm @ 780mA, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.3A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRLD120 is a single N-Channel MOSFET which is commonly used as a switching device. It is an ideal device for high power switching applications such as motor control, power management, and other high current applications. In addition, it can also be used for high speed switching or direction control applications.
The IRLD120 is based on a vertical double diffused MOSFET (VDMOS) design. VDMOS transistors are known for their high efficiency and low losses when used in high frequency circuits. The IRLD120 also features a high level of integration, providing superior performance when compared to other types of transistors. Its simplified construction makes it easy to mount on a circuit board and its compatibility with various lead-free manufacturing processes makes it a cost-effective choice.
The IRLD120 is an excellent candidate for a variety of switching applications. It is especially suited for use in switching applications requiring high current and/or high voltage. Its low gate drive requirements, low input capacitance, and low on-resistance also make it ideal for motor driving, light switches, and other precision control applications. The IRLD120 also offers low capacitance, typifying fast switching times, and has excellent temperature stability.
The IRLD120 is available in a variety of packages, such as SO-8, DPAK, and TO-220AB. It has an operating voltage of 20V, a maximum drain current of 40A, and an on-resistance of 4.2 mOhm. It has a maximum drain-source voltage of 35V, a gate threshold voltage of 3V, and a forward transconductance of 250 mS. In addition, it has a maximum junction temperature of 150 °C and a maximum power dissipation of 10W.
The IRLD120 is an extremely efficient and reliable transistor. Its advanced internal structure allows it to handle high-voltage and high-current switching applications with minimal losses. Furthermore, its low input capacitance and low gate drive requirements make it an ideal choice for motor driving and other precision applications. The IRLD120 is available in a variety of packages to suit a wide range of applications and has an extremely low on-resistance, making it ideal for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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