
Allicdata Part #: | IRLD024-ND |
Manufacturer Part#: |
IRLD024 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 2.5A 4-DIP |
More Detail: | N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-D... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRLD024 is a power field-effect transistor, or a power FET, and is widely used in a variety of applications. It is a part of the IRLD power FET product family from International Rectifier and is designed for use in high power switching applications, such as in audio amplifiers, power supplies, motor control circuits, and other optimally-regulated digital and linear systems.
The IRLD024 is a robust, 75-amp, single N-channel, power MOSFET, capable of withstanding up to 20V across its source and drain. This makes it well suited for high-current switching applications like switchmode power supplies and else. It was developed to enhance the performance of the typical MOSFETs and has become a premier choice for many of today’s higher power applications. Due to this improved level of operation, the IRLD024 is available in a wide range of package styles.
The working principle of the IRLD024 is based on a standard MOSFET operating theory. As voltage is applied across the gate and source, it creates an electric field that allows current to flow from the drain to the source. This field is regulated by varying the voltage drop across the gate. As the drain-source voltage is held constant, the current flowing across the source and drain junction is dependent solely on the gate-source voltage. The IRLD024 is able to dissipate large amounts of energy very efficiently due to its higher drain-source breakdown voltage and operating current ranges.
The IRLD024 model is specifically created for high-current switching applications requiring low voltage drop and high efficiency. This is accomplished through its use of a symmetrical vertical structure, with four independent devices arranged in a single-ended laminated package. This gives it superior switching speed as well as superior thermal performance compared to a regular MOSFET. The IRLD024 also has an extremely low on-resistance, which enables it to operate with low losses and excellent low voltage control.
The IRLD024 is a valuable asset for any system application that calls for high-current switching with low power losses and excellent temperature stability. With its symmetrical package and superior thermal characteristics, it is extremely beneficial for a variety of medium- to high-power systems. It is a reliable, cost-effective solution for many of today’s demanding power applications.
The specific data is subject to PDF, and the above content is for reference
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