IRLD024 Allicdata Electronics
Allicdata Part #:

IRLD024-ND

Manufacturer Part#:

IRLD024

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 2.5A 4-DIP
More Detail: N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-D...
DataSheet: IRLD024 datasheetIRLD024 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRLD024 is a power field-effect transistor, or a power FET, and is widely used in a variety of applications. It is a part of the IRLD power FET product family from International Rectifier and is designed for use in high power switching applications, such as in audio amplifiers, power supplies, motor control circuits, and other optimally-regulated digital and linear systems.

The IRLD024 is a robust, 75-amp, single N-channel, power MOSFET, capable of withstanding up to 20V across its source and drain. This makes it well suited for high-current switching applications like switchmode power supplies and else. It was developed to enhance the performance of the typical MOSFETs and has become a premier choice for many of today’s higher power applications. Due to this improved level of operation, the IRLD024 is available in a wide range of package styles.

The working principle of the IRLD024 is based on a standard MOSFET operating theory. As voltage is applied across the gate and source, it creates an electric field that allows current to flow from the drain to the source. This field is regulated by varying the voltage drop across the gate. As the drain-source voltage is held constant, the current flowing across the source and drain junction is dependent solely on the gate-source voltage. The IRLD024 is able to dissipate large amounts of energy very efficiently due to its higher drain-source breakdown voltage and operating current ranges.

The IRLD024 model is specifically created for high-current switching applications requiring low voltage drop and high efficiency. This is accomplished through its use of a symmetrical vertical structure, with four independent devices arranged in a single-ended laminated package. This gives it superior switching speed as well as superior thermal performance compared to a regular MOSFET. The IRLD024 also has an extremely low on-resistance, which enables it to operate with low losses and excellent low voltage control.

The IRLD024 is a valuable asset for any system application that calls for high-current switching with low power losses and excellent temperature stability. With its symmetrical package and superior thermal characteristics, it is extremely beneficial for a variety of medium- to high-power systems. It is a reliable, cost-effective solution for many of today’s demanding power applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRLD" Included word is 8
Part Number Manufacturer Price Quantity Description
IRLD120PBF Vishay Silic... -- 2379 MOSFET N-CH 100V 1.3A 4-D...
IRLD110 Vishay Silic... -- 1000 MOSFET N-CH 100V 1A 4-DIP...
IRLD014 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 1.7A 4-DI...
IRLD110PBF Vishay Silic... -- 6656 MOSFET N-CH 100V 1A 4-DIP...
IRLD120 Vishay Silic... -- 1000 MOSFET N-CH 100V 1.3A 4-D...
IRLD024PBF Vishay Silic... 0.89 $ 2347 MOSFET N-CH 60V 2.5A 4-DI...
IRLD024 Vishay Silic... -- 1000 MOSFET N-CH 60V 2.5A 4-DI...
IRLD014PBF Vishay Silic... -- 1979 MOSFET N-CH 60V 1.7A 4-DI...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics