IRLD110PBF Allicdata Electronics
Allicdata Part #:

IRLD110PBF-ND

Manufacturer Part#:

IRLD110PBF

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 1A 4-DIP
More Detail: N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI...
DataSheet: IRLD110PBF datasheetIRLD110PBF Datasheet/PDF
Quantity: 6656
1 +: $ 0.78000
10 +: $ 0.75660
100 +: $ 0.74100
1000 +: $ 0.72540
10000 +: $ 0.70200
Stock 6656Can Ship Immediately
$ 0.78
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 540 mOhm @ 600mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRLD110PBF is a Power MOSFET transistor(Metal-Oxide-Semiconductor Field Effect Transistor, or MOSFET), which is a form of amplifier with many applications. As a two-terminal device, capable of conducting electrical current, this particular type of transistor can be used in a variety of electronic applications, from amplifiers to power supplies, radio frequency amplifiers and even in smart junction transistors. This article will explore the various applications of the IRLD110PBF, as well as its working principle.

Applications of IRLD110PBF

The IRLD110PBF is a widely used Power MOSFET, due to its excellent electrical properties, including a high-speed switching capability, a low gate-threshold voltage, and robust breakdown voltage characteristics. Among the many applications of the IRLD110PBF, the most common applications include power supply design and audio amplifiers. For example, in power supply design, the IRLD110PBF can be used as a switch to control the amount of current passing through the circuit. In audio amplifiers, the IRLD110PBF can be used as an input stage to boost the current level in the output stage, thus providing the desired amplification effect. Additionally, the IRLD110PBF can be used in radio frequency amplifiers, where they are used as low-noise, high-speed switches.

Working Principle of IRLD110PBF

The working principle of the IRLD110PBF can be elaborated on in two parts: the enhancement mode and the depletion mode. As a two-terminal device, the IRLD110PBF is formed of two electrodes: a source and a drain. Both of these electrodes are connected by a channel, which is formed by a layer of insulating material called a gate. To turn on the IRLD110PBF, a small amount of current is applied to the gate, thereby altering the electrical characteristics of the channel and allowing current to pass through it. In the enhancement mode, an applied voltage on the gate results in opening of the channel, allowing electrons to flow freely and producing an enhancement. In the depletion mode, however, an applied voltage on the gate results in closing of the channel, thus depleting the charge carriers and forming a low-voltage Off state.

In conclusion, the IRLD110PBF is a widely used Power MOSFET transistor, with many applications in both power supply design and audio amplifiers. Its working principle can be elaborated on both its enhancement and depletion modes. By understanding the various applications and working principle of the IRLD110PBF, engineers and technicians can better understand how to maximize the potential of this powerful transistor.

The specific data is subject to PDF, and the above content is for reference

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