
Allicdata Part #: | IRLD110PBF-ND |
Manufacturer Part#: |
IRLD110PBF |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 1A 4-DIP |
More Detail: | N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DI... |
DataSheet: | ![]() |
Quantity: | 6656 |
1 +: | $ 0.78000 |
10 +: | $ 0.75660 |
100 +: | $ 0.74100 |
1000 +: | $ 0.72540 |
10000 +: | $ 0.70200 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 600mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRLD110PBF is a Power MOSFET transistor(Metal-Oxide-Semiconductor Field Effect Transistor, or MOSFET), which is a form of amplifier with many applications. As a two-terminal device, capable of conducting electrical current, this particular type of transistor can be used in a variety of electronic applications, from amplifiers to power supplies, radio frequency amplifiers and even in smart junction transistors. This article will explore the various applications of the IRLD110PBF, as well as its working principle.
Applications of IRLD110PBF
The IRLD110PBF is a widely used Power MOSFET, due to its excellent electrical properties, including a high-speed switching capability, a low gate-threshold voltage, and robust breakdown voltage characteristics. Among the many applications of the IRLD110PBF, the most common applications include power supply design and audio amplifiers. For example, in power supply design, the IRLD110PBF can be used as a switch to control the amount of current passing through the circuit. In audio amplifiers, the IRLD110PBF can be used as an input stage to boost the current level in the output stage, thus providing the desired amplification effect. Additionally, the IRLD110PBF can be used in radio frequency amplifiers, where they are used as low-noise, high-speed switches.
Working Principle of IRLD110PBF
The working principle of the IRLD110PBF can be elaborated on in two parts: the enhancement mode and the depletion mode. As a two-terminal device, the IRLD110PBF is formed of two electrodes: a source and a drain. Both of these electrodes are connected by a channel, which is formed by a layer of insulating material called a gate. To turn on the IRLD110PBF, a small amount of current is applied to the gate, thereby altering the electrical characteristics of the channel and allowing current to pass through it. In the enhancement mode, an applied voltage on the gate results in opening of the channel, allowing electrons to flow freely and producing an enhancement. In the depletion mode, however, an applied voltage on the gate results in closing of the channel, thus depleting the charge carriers and forming a low-voltage Off state.
In conclusion, the IRLD110PBF is a widely used Power MOSFET transistor, with many applications in both power supply design and audio amplifiers. Its working principle can be elaborated on both its enhancement and depletion modes. By understanding the various applications and working principle of the IRLD110PBF, engineers and technicians can better understand how to maximize the potential of this powerful transistor.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRLD120PBF | Vishay Silic... | -- | 2379 | MOSFET N-CH 100V 1.3A 4-D... |
IRLD110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1A 4-DIP... |
IRLD014 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.7A 4-DI... |
IRLD110PBF | Vishay Silic... | -- | 6656 | MOSFET N-CH 100V 1A 4-DIP... |
IRLD120 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
IRLD024PBF | Vishay Silic... | 0.89 $ | 2347 | MOSFET N-CH 60V 2.5A 4-DI... |
IRLD024 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.5A 4-DI... |
IRLD014PBF | Vishay Silic... | -- | 1979 | MOSFET N-CH 60V 1.7A 4-DI... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
