IS61LV256AL-10TLI

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IS61LV256AL-10TLI is a type of integrated circuit (IC) built with CMOS technology and is classified as a “memory.” This device is 8-kilobyte static random access memory (SRAM) with a pin-to-pin compatible footprint and low current consumption levels.

This particular RAM’s application field is broad and varied, and the device is suitable for use in non-volatile data storage and buffering, digital signal processing, data transfer, and embedded systems. Due to its low power consumption, the chip has found its way into battery-powered equipment where using higher power and larger capacity alternatives would not be feasible. As a static RAM, it can offer improved write and read times when compared to dynamic RAM.

The memory’s working principle is quite simple, and follows the standard setup: a series of address pins and data pins provide the chip’s select and write/read functionality, while transistors and capacitors allow data to be held in the memory even when removed from a power source.

The IS61LV256AL-10TLI is an example of SRAM, which uses flip-flops to store data, rather than DRAM which utilizes capacitors. Each memory location or “cell” inside an SRAM chip contains a six transistor circuit which is capable of storing 1 bit of data at a time. As these cells are built with transistors, power is not needed to keep the data intact.

The six transistors inside each cell are connected in pairs as cross-coupled inverters, which act like a latch that is either set or reset by the write signals. Each pair is also connected to a single output line. When both transistors in a pair turn on, the output line is pulled low and the data is stored in the circuit. When both transistors are turned off, the output is set high and the circuit is "reset" until the write signals arrive again.

The IS61LV256AL-10TLI has multiple address and data pins, and it can be used in one of two different common memory connection configurations. In single-port memory systems, all pins are connected directly to the processor, whereas a two-port system requires a separate chip select line and address strobe line, or two chip select lines.

When data is written to the device, address lines A0 through A11 need to be set, while the write enable line (WE) needs to be asserted. This indicates to the chip that the data placed on the data lines is ready to be written. The processor then asserts the chip select line and address strobe line. This causes the entire address information to be decoded and the data is written to the specified address.

When reading a memory location, the address lines would be set for the appropriate location, and the chip select and read/write lines would be asserted. This causes the appropriate data location in the chip to be decoded and the data to be placed on the data lines. The data present at these lines can then be read by the processor.

The IS61LV256AL-10TLI has three different power modes; standby mode, active mode, and deep standby mode. In standby mode, the current drawn is reduced by active power down circuits, but data can still be transferred within the chip. When the active mode is enabled, current is further reduced, but the chip is still able to be written to and from. The deepest power saving mode is deep standby mode which completely turns off the chip’s circuitry.

In summary, the IS61LV256AL-10TLI memory chip is a versatile and durable device which is suitable for use in a range of different applications. This 8K static RAM chip requires minimal power to operate, runs at high performance levels, and has a wide range of modes that offer various power saving levels.

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