IS61WV25616BLL-10TLI Allicdata Electronics
Allicdata Part #:

706-1106-ND

Manufacturer Part#:

IS61WV25616BLL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS61WV25616BLL-10TLI datasheetIS61WV25616BLL-10TLI Datasheet/PDF
Quantity: 2346
Stock 2346Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61WV25616BLL-10TLI is a dynamic random access memory (DRAM) that is designed for high density, low cost and low power. It is commonly used in processor and microcontroller platforms for providing a low-cost, high-performance memory resource. Its applications range from computer products and various industrial products, both in consumer electronics and industrial automation.

The IS61WV25616BLL-10TLI offers a low-configuration 512K bit, or 64K-8bit, volatile memory which makes it a perfect fit for low-cost embedded systems with limited memory requirements. It is composed of 16 memory banks of 4K-bit capacity and a differential address clock. The chip offers a single sided, 10 nanosecond access time and is synchronous operation, with a maximum frequency of 75MHz.

The IS61WV25616BLL-10TLI is structured with a single side of diodes, SDRAMs and capacitors, allowing for an efficient pin layout and reducing the cost of mounting. It has an on-chip sense amplifier and write driver to reduce system power consumption, as well as internal registers for address and burst mode operation.

The IS61WV25616BLL-10TLI utilizes a pipeline architecture, allowing for two memory access operations to occur simultaneously. This supports a fast read/write throughput, making it ideal for high-performance applications where memory access speed is critical. It is also built with refresh logic for dynamic refresh, making it more energy-efficient than the traditional DRAM.

In addition, the IS61WV25616BLL-10TLI offers a 256bit or 32-byte synchronous burst feature which increases the data rate. It can be used to buffer read and write operations at a burst rate of up to 400 Mbps or 16 transfers per address cycle. It also has an on-chip self-refresh timer and a self-refresh control register to allow the system to efficiently control its power.

The IS61WV25616BLL-10TLI is a reliable and cost-effective SDRAM solution for embedded systems. Its small size makes it a great option for applications where space is limited and its high performance makes it suitable for high-demand applications. With its ability to offer 512K bit of memory, high-speed operation, low power consumption and burst mode capabilities, it is well equipped to meet the memory needs of a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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