ISL6605IB

PMIC – Gate Drivers

Integrated circuits are capable of performing multiple functions, allowing complex electronics-related tasks to be accomplished in smaller, cost-effective packages. This is especially important in power management, where advanced intelligence and tight control are key components of achieving efficient operation in power systems. Power management integrated circuits (PMICs) integrate multiple functions together, such as current control or voltage regulation, in the same IC. Gate drivers are specialized integrated circuits used to control larger loads or switch higher voltages, and are often used in in conjunction with PMICs to ensure efficient operation of devices such as power MOSFETs.

ISL6605IB Application Field and Working Principle

The ISL6605IB from Intersil is a dedicated power MOSFET gate driver IC, designed for use in battery-powered applications. It was designed for use in two-cell, 3.2V to 5.5V applications, although higher operating voltages of up to 20V are also allowed. The device can provide drive current up to 1.1A and a typical rise/fall time of 150ns/70ns respectively. Its packages are small enough to allow for easy integration into a device.

The ISL6605IB integrates two gate drivers with under-voltage lockout (UVLO), thermal shutdown (TSD) and a slew rate limiter. The included UVLO feature ensures safe operation of the power MOSFET by preventing it from turning on until the gate voltage is sufficiently high, while the TSD feature will automatically turn the MOSFET off if its temperature becomes too high. This is particularly important in next-generation battery-powered systems which use switch-mode architecture.

The built-in slew rate limiter smooths the turn-on switch transitions and eliminates the ringing of the drive, reducing the EMI noise generated by the power MOSFET. The two included drivers can be independently configured to drive either an N- or a P-channel MOSFET, and commonly used features such as synchronous driving of multiple devices, pre-load of the gate capacitance and level shifting are supported.

In addition, the ISL6605IB can be used as a low-power FET switch, providing fast switching speeds, high drive currents and low on-state resistances. The device is capable of driving small gate capacitance and high switch resistance, and its low 240µA quiescent current makes it suitable for portable applications operating on tight power budgets. It also features fast switching speeds (less than 5µs to turn off) and low amount of over-driving.

All in all, the ISL6605IB from Intersil is an advanced gate driver designed to reduce the complexity and cost of power MOSFET switching in battery-powered applications. Its range of features, along with its small size, makes it the ideal choice for battery-related and other power MOSFET-driving applications.