ISL6609IRZ-T

Current - Peak Output (Source, Sink):	-, 4A
Base Part Number:	ISL6609
Supplier Device Package:	8-QFN (3x3)
Package / Case:	8-VQFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	8ns, 8ns
High Side Voltage - Max (Bootstrap):	36V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	1V, 2V
Voltage - Supply:	4.5 V ~ 5.5 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

ISL6609IRZ-T is a gate driver, which is specifically designed for MOSFET switch-mode power conversion and power supply applications, such as DC-DC power converters, power inverters, motor drives and other power management applications. It provides high precision, low-flow operation, amplitude control, and short overshoot for switching frequencies up to 10MHz to produce accurate, high-quality signals with low power loss and fast response times. It features an adjustable slew rate and internal 30V current limiting protection resistors.

ISL6609IRZ-T Application Field

ISL6609IRZ-T is widely applied to various applications, such as motor control, power supply conversion, power switching, light dimming and lighting, power factor compensation, switching amplification, EMI suppression and other power management systems. Specifically speaking, it can be used in home appliance, industrial, automotive and military applications.

ISL6609IRZ-T Working Principle

ISL6609IRZ-T is based on a pulse-width modulation control architecture and it uses a pulse-width modulation to control the device’s output voltage level. It operates with a high voltage power-switching frequency and applies a PWM switching method to control the output voltage.Its gate driver consists of a driver stage and a logic-level stage. The driver stage is responsible for translating the logic-level voltage of the drive circuit into the necessary high voltage level required for the device. The logic-level stage interprets the logic signals provided by the drive circuit, such as the enable, on/off or pulse width modulation (PWM) signals, and translates them into the appropriate gate-voltage level.The ISL6609IRZ-T can be used with a variety of MOSFET devices, from a single low-side switch in a buck configuration up to a 4-phase buck-boost topology with 3-phase N- and P-channel devices. It allows for efficient operation of the output MOSFET in those applications by providing a fast turn-on, a controlled turn-off, accurate amplitude control and a minimal overshoot. Moreover, ISL6609IRZ-T features an integrated low-side driver and an adjustable slew-rate control magnitude. It also provides an internal 30V current limiting to protect its output during an over-current event.

Conclusion

ISL6609IRZ-T is one type of gate driver designed to drive the power switches in MOSFET switch-mode power conversion and power supply applications, such as DC-DC power converters, power inverters, motor drives, etc. It offers high precision, low-current operation and short overshoot with fast response times, as well as integrated current protections. ISL6609IRZ-T is suitable for a variety of applications because of its adjustable slew rate and high-side / low-side drivers.

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