IXDN502D1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMIC Gate Drivers are integrated circuits that enable the low-level signals to drive the gates of power MOSFETs and IGBTs. IXDN502D1 is a type of PMIC Gate Driver, with an 8mm by 8mm footprint, suitable for both chip-on-board and SMT applications. It has an operating voltage range from 7V to 14V, and is suitable for controlling a wide variety of power MOSFETs and IGBTs.

The IXDN502D1 has an innovative circuit design that provides integrated bootstrap diodes and active pull-up/pull-down voltage control capabilities. This allows the gate driver to provide maximum efficiency, low switching noise and fast transition without compromising the gate capacitance or driving power levels. In addition, the supply current of less than 300uA ensures power savings and reduced component costs.

The IXDN502D1 also comes with a number of features tailored to meet the needs of various industrial applications. The 6-bit adjustable voltage control pins are designed to provide precise control of the gate\'s drive level, allowing the user to adjust the switching speed, reduce switching losses, and control the current and temperature characteristics. The IXDN502D1 also provides separate soft-start and overcurrent protection settings, ensuring reliable operation in demanding applications.

At the heart of the IXDN502D1 lies its unique application field and working principles. It is designed for gate drivers for large size, low voltage gate drivers such as MOSFETs and IGBTs. In operation, the IXDN502D1 is able to generate high side and low side gate drive outputs, which are then used to switch the power FETs/IGBTs. For each output, the IXDN502D1 utilizes the separate high and low side gate driver stages. The high side gate driver stage includes an N-channel FET (T1) with its gate connected to the output, while the low side gate driver stage consists of an N-channel and an NPN bipolar junction transistor (T3/T4) in parallel. A novel circuit design and high-speed switching can be achieved by connecting the FET and IGBT sources to the transistor bases and controlling the gate voltage.

For the IXDN502D1, which is the latest addition to IXYS\' PMIC Gate Drivers portfolio, the application field is that of power MOSFETs and IGBTs in low voltage DC to DC converters. The IXDN502D1 has the capability to efficiently drive power FETs/IGBTs in low voltage applications, providing improved switching performance, reduced heat dissipation, and increased efficiency. It is also suitable for driving synchronous rectifier MOSFETs from Ring Oscillator signal sources, maximizing efficiency and reducing the losses in the power converters.

IXDN502D1 from IXYS is an efficient and reliable gate driver that can provide high-speed switching and efficient power management for a wide range of industrial applications. The IXDN502D1 offers a variety of features geared towards meeting the needs of modern industrial applications, allowing users improved performance and expanded design flexibility. Whether used in low voltage applications or as a synchronous rectifier driver, the IXDN502D1 gate driver can help to maximize efficiency, reduce losses and improve system reliability.

The specific data is subject to PDF, and the above content is for reference