IXDN430MYI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXDN430MYI, a chip with a Gate Driver, is a member of the Power Management Integrated Circuit (PMIC) family. It is designed to provide on-chip, low-voltage, single-channel, bidirectional, low-noise, high-current and low-side drive capabilities.

The IXDN430MYI can be used in a variety of applications, such as driving the gates of insulated gate bipolar transistors (IGBTs), controlling the force conduction amplifier (FCA), building half-bridge and full-bridge power switches, and providing gate drive for low-side voltage-controlled transistors (VC Trons).

The IXDN430MYI is a common source DMOS transistor with a source, an output, and a substrate. The source voltage is the voltage between the source and the output pins when the device is off. The output structure of the transistor includes a diode-connected drain-to-source structure and an output resistor, which helps to reduce the current ripple. The source voltage should be high enough to provide the service voltage to the output resistor. The DMOS output structure provides high-output drive current.

The IXDN430MYI features a triple-output-level (TDL) gate driver, which delivers up to four levels of high-drive current, adjustable up to a maximum of 3.2A. The TLD driver has a built-in shunt resistor that provides excellent short-term surge capability. The gate driving can be done in a single cycle or up to two cycles, depending on the selected mode. The TLD driver also features an adjustable load-line circuit, which can be programmed to provide the desired voltage drop and enable the device to drive large capacitive loads.

The IXDN430MYI also features a low-side driver, which operates at a lower voltage than the TLD driver. It is capable of driving large capacitive loads with a minimum voltage drop and is suitable for driving IGBTs with low-voltage high-side gate drive.

The Gate Driver offers a variety of levels of high-speed switching, allowing the user to tune the device for a wide range of applications. The device can switch from one high-speed state to another within one session or two sessions depending on the selected mode. The Gate Driver can also provide protection against shoot-through currents, and it can be configured as either a synchronous or asynchronous device.

The IXDN430MYI provides several protection features, including short-circuit protection, over-voltage protection, and over-current protection. The over-current protection can be programmed to limit the peak current of the driver and reduce the risk of damage to the driver. The chip also features a built-in voltage-limiting circuit to protect against unexpected peaks or drops in the load voltage.

In summary, the IXDN430MYI is an advanced gate driver from the Power Management Integrated Circuits (PMIC) family. It provides low-voltage, high-current, low-side and bidirectional drive capabilities. It also includes a triple-output-level and a low-side driver, and is suitable for controlling IGBTs and FCA drivers and switches. Its over-current protection and voltage-limiting circuit help to reduce the risk of damage to the driver, and its adjustable load-line circuit can be configured for different applications.

The specific data is subject to PDF, and the above content is for reference