IXDN402SI

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When it comes to power management and integrated circuits (PMICs), gate drivers are essential parts of the system since they control and interface components such as power transistors and power electronic switches. IXDN402SI is a dual N-channel MOSFET gate driver from IXYS Corporation, which integrates two low-side and two high-side MOSFET drivers to provide high current drive capability with extremely low output and rise/fall times, allowing the MOSFETs to do their job at their highest efficiency.

Applications

IXDN402SI is designed for driving external MOSFETs for switching high-voltage DC/AC loads up to 1200V in multiple applications, including but not limited to:.

• High speed switching DC/AC Power Supplies
• SMPS with power factor correction (PFC), AC-DC, and DC-AC converters
• Switched-Mode Motor drives
• Brushless motor drives
• Battery charge and discharge applications
• DC/DC converters

Features

• Maximum operating voltage: 1200V
• Input voltage: 5V to 18V
• Output drive current: up to 2A
• Fully integrated deadtime adjustment
• Leading edge blanking (LEB) designed to reduce shoot-through current
• Internal self-biased bootstrap diode
• Built-in over-voltage protection
• Temperature range: -40°C to 125°C

Working Principle

The IXDN402SI consists of two low-side and two high-side drivers. The low-side drivers are configured to drive the N-channel MOSFETs grounded to the lower voltage rail, while the high-side drivers are configured to drive the N-channel MOSFETs to the higher voltage rail. The dead-time control allows synchronous signals (independent for high-side and low-side drivers) to adjust the delay time. LEB is used to eliminate shoot-through current by blanking the driver\'s inputs during the rising/falling edges of the low/high side switches, as well as to improve the efficiency of the MOSFET switches. The IXDN402SI also features an internal self-biased bootstrap diode to provide the gate voltage supply required by the high-side MOSFETs. The device also includes an additional over-voltage protection (OVP) logic block to monitor the high-side MOSFET drain voltage and to prevent device failure in case of over-voltage.

Conclusion

The IXDN402SI from IXYS Corp. is an advanced dual N-channel MOSFET gate driver IC which can drive any MOSFET to 1200V. It is ideal for applications requiring high speed switching and it\'s protective features and integrated dead time adjustment make it an ideal choice for a large variety of power management applications.

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