IXDN514D1

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IXDN514D1 is a high-side power MOSFET and IGBT gate driver IC with adjustable dead time and embedded protection features. It is available in a 4-pin SOIC-14 package and features adjustable dead time, programmable UVLO threshold, adjustable low side off-time delay, and thermal shutdown. The I/Os are compatible with 5 V logic levels and have an operating voltage range of 4.5 V to 28 V.

The IXDN514D1 is a fully integrated power MOSFET and IGBT gate driver. It provides all necessary functions to drive a power transistor, including ground referenced bias for the gate, adjustable dead time, programmable UVLO threshold and adjustable low side off-time delay. The dead time control can be used to minimize the shoot-though current between the high and low side MOSFETs. The optimized design of the driver offers best-in-class propagation delay and short-circuit protection. The device is suitable for applications such as DC/DC converters, lighting, and motor drives.

Application field

The IXDN514D1 gate driver is ideal for applications in motor control and power conversion. It provides low propagation delay and short-circuit protection, making it suitable for a wide range of motor control and high-frequency power conversion applications. It is particularly useful in battery-powered systems, such as laptop computers and tablets, due to its low-power consumption and excellent performance in the presence of temperature variations.

The IXDN514D1 can also be used in DC/DC converters, lighting applications, and other power electronic applications such as solar inverters, AC-DC converters,or servo drives. It is also suited for IGBT gate drivers in battery management systems and other high-voltage switching applications. The adjustable dead time and low side off-time delay make it suitable for use in high-frequency, high-efficiency power conversion designs.

Working Principle

The IXDN514D1 gate driver is a fully integrated device that provides the necessary functions to drive a power transistor. It has a ground-referenced bias input and can be used to drive either a power MOSFET or IGBT. The device has a wide input range of 4.5 V to 28 V and offers adjustable dead times, programmable UVLO thresholds, adjustable low side off-time delay, and thermal shutdown.

The dead time control of the IXDN514D1 can be used to minimize the shoot-through current between the high and low side MOSFETs. The optimized design of the device offers best-in-class propagation delay and short-circuit protection. The device is capable of driving up to 60 A of current at frequencies up to 20 kHz. The low side off-time can also be used for synchronizing the low-side MOSFET with the high-side MOSFET.

The IXDN514D1 features a programmable UVLO threshold that prevents damage to the MOSFET due to excessive injection of charge. The adjustable dead time control can be used to reduce the shoot-through current between the high and low side MOSFETs. It also offers a configurable thermal shutdown, which automatically disables the gate driver in case of overtemperature.

The IXDN514D1 is a versatile and feature-rich gate driver that is suitable for a wide range of applications. It is easy to use and offers a low-power consumption, making it an ideal choice for battery-powered applications.

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