Allicdata Part #: | IXDN504SIAT/R-ND |
Manufacturer Part#: |
IXDN504SIAT/R |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IXYS |
Short Description: | IC GATE DRIVER DUAL 4A 8-SOIC |
More Detail: | Low-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IXDN504SIAT/R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Logic Voltage - VIL, VIH: | 0.8V, 3V |
Base Part Number: | IXD*504 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 9ns, 8ns |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 4A, 4A |
Series: | -- |
Voltage - Supply: | 4.5 V ~ 30 V |
Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IXDN504SIAT/R is a standalone, high-speed device manufactured by Infineon Technologies that is designed as a gate driver for PMIC applications. The driver has a maximum output current of 9A, which can be used to drive power MOSFETs or IGBTs. It has an integrated over voltage protection (OVP) to prevent damage to the device. The device has a wide input voltage range of 2.3V to 5.5V and a high-voltage start (HVST) feature that can be used to turn on a power MOSFET when a higher than standard voltage is applied.
The IXDN504SIAT/R is designed to improve the efficiency of PMICs. It does this by allowing much faster switching times compared to older gate drivers. This increased speed allows for higher current load switching with fewer active devices in the system. The IXDN504SIAT/R also has a patented architecture that minimizes shoot-through current, which further improves efficiency.
When the device is used in a PMIC application, it can be configured for either PWM or linear operation. In PWM mode, the device can generate high frequency pulse width modulation signals. This allows for higher power efficiency of PMIC circuits as the switching losses are minimized. In linear mode, the device can drive current into the load while limiting the voltage transients at the switches.
The IXDN504SIAT/R also has a built-in protection feature that detects any overvoltage or undervoltage conditions. If a voltage fault is detected, the device will shut down the gate drive and then reset itself when the voltage returns to normal.
The IXDN504SIAT/R has various Applications. It is typically used as a gate driver for PMICs in consumer devices such as smartphones and tablets. The driver can also be used for automotive applications such as driving power MOSFETs for lighting, motors and other loads. It can also be used for industrial applications such as energy storage, renewable energy and motor applications where high efficiency is desired.
In summary, the IXDN504SIAT/R is a high-speed gate driver specifically designed for PMIC applications. It has a maximum output current of 9A and a wide range of input voltage of 2.3V to 5.5V. It can be configured to either PWM or linear operation for increased efficiency. The built-in protection feature ensures the device is protected from unexpected voltage conditions. The IXDN504SIAT/R is designed for use in applications in consumer, automotive and industrial use.
The specific data is subject to PDF, and the above content is for reference
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