Allicdata Part #: | IXDN602SIATR-ND |
Manufacturer Part#: |
IXDN602SIATR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IXYS Integrated Circuits Division |
Short Description: | 2A 8 LEAD SOIC DUAL NON INVERTIN |
More Detail: | Low-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IXDN602SIATR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
Voltage - Supply: | 4.5 V ~ 35 V |
Logic Voltage - VIL, VIH: | 0.8V, 3V |
Current - Peak Output (Source, Sink): | 2A, 2A |
Input Type: | Non-Inverting |
Rise / Fall Time (Typ): | 7.5ns, 6.5ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The IXDN602SIATR is a Power Management Integrated Circuit (PMIC) used as a Gate Driver. It integrates the logic and driving functions in one device and it is used in power systems for high power MOSFETs, IGBTs and many other high voltage applications. The IXDN602SIATR is designed to drive high current MOSFETs, IGBTs and other logic controlled power switches. It works by supplying customized gate control signals needed to drive the power switches.
The IXDN602SIATR has several key features. First, it has an integrated low voltage output voltage range of 0.5V-6.5V with a very low current consumption. It includes a PWM (pulse width modulation) output with a frequency of up to 750KHz and a pulse peak current of up to 3A for both the P-channel and N-channel outputs. The device also features independent logic inputs for pre-driver and power-switch functions, adjustable dead-time between pre-driver and power-switch, and an adjustable voltage threshold on any of its inputs. Lastly, the IXDN602SIATR has an innovative patented sleep-mode that can reduce current consumption to a few microamperes.
The IXDN602SIATR is ideal for driving high power MOSFETs and IGBTs in high current automotive, industrial, and high-voltage motor drive applications. It features high current drive capability (up to 6A in DC configuration), adjustable voltage threshold for both pre-driver and power-switch drivers, and independent logic for pre-driver and power-switch. It also has adjustable dead-time between pre-driver and power-switch, which helps to reduce EMI (electromagnetic interference). Lastly, the IXDN602SIATR has protection circuitry that includes input data valid enable, over-temperature, over-voltage protection, short circuit and reverse battery protection.
In addition to these features, the IXDN602SIATR is highly configurable. It is designed to be easily adapted to fit any application with programmable settings such as switching frequency, pulse width, dead-time, pre/power switch ratio and logic. This allows it to be used in a wide variety of applications, giving end-users the flexibility to optimize the IC for their specific needs. The device also features built-in protection circuits and has the ability to enter a low power sleep-mode in order to reduce the overall power consumption and heat dissipation.
Overall, the IXDN602SIATR is an excellent example of a Power Management Integrated Circuit (PMIC) used as a Gate Driver. With its wide range of features and its ability to be optimized for any specific application, it is an ideal choice for driving high power MOSFETs and IGBTs. Its integrated protection circuitry and innovative sleep-mode helps to ensure that the device will perform reliably for years to come.
The specific data is subject to PDF, and the above content is for reference
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