IXDN614SI

Series:	--
Packaging:	Tube
Part Status:	Active
Driven Configuration:	Low-Side
Channel Type:	Single
Number of Drivers:	1
Gate Type:	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:	4.5 V ~ 35 V
Logic Voltage - VIL, VIH:	0.8V, 3V
Current - Peak Output (Source, Sink):	14A, 14A
Input Type:	Non-Inverting
Rise / Fall Time (Typ):	25ns, 18ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:	8-SOIC-EP

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Introduction

IXDN614SI is an active power management integrated circuit (PMIC) used to drive MOSFETs and IGBTs in applications such as motor control, industrial automation and renewable power. This system-on-chip device includes voltage regulation, powerful gate drivers, protection features and other functions required for the design, allowing engineers to build small, compact system designs that are highly reliable and cost effective. IXDN614SI belongs to a category of PMICs called Gate Drivers, which will be discussed further in this article.

Application Field

Gate drivers are used in many automotive, industrial, communication, power and consumer electronics applications, including motor control, solar tracking, renewable energy systems, industrial automation, lighting control and HVAC systems. It is used to control the on/off switching of an output transistor or other power device by providing the base drive required for the device to turn on. The IXDN614SI device is designed for a wide range of applications, ranging from simple automotive powertrain systems to more complex solar tracking, renewable energy systems, motor control and industrial automation.

Working Principle

The IXDN614SI works by providing powerful gate driver capabilities to drive MOSFETs and IGBTs. It includes a number of protection features, such as over-voltage, over-current and total fault protection, as well as an ESD protection circuit. The device also includes a built-in noise filter to reduce the effect of spurious signals on the gate drivers.The IXDN614SI uses a low-side MOSFET and a high-side gate-source voltage (VGS) switch to control the MOSFET gate drivers and IGBTs. A pulse-width modulation (PWM) signal is used to control the turn-on voltage for the high-side MOSFET and the four IGBT gate drivers are driven independent of each other. A dedicated high-side and low-side MOSFET protection circuit is included, providing protection from over-voltage and over-current conditions.The IXDN614SI also provides an automatic power shutdown to prevent over-voltage and over-current events from affecting the system. In addition, an on-chip ESD protection circuit is provided for the output devices to protect them from electrostatic discharge.

Conclusion

IXDN614SI is a powerful PMIC that can be used in a wide range of applications such as motor control, industrial automation and renewable power. Its low-side MOSFET and high-side gate-source voltage (VGS) switch provides powerful gate driver capabilities while its on-chip ESD protection circuit and over-voltage and over-current protection features protect the system and output devices from damage. IXDN614SI belongs to the Gate Driver category of PMICs, which provide the base drive required to control the on/off switching of an output transistor or other power device.

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